Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO2 transistors acting as three-terminal memristors

M Dragoman; A Dinescu; D Dragoman; C Palade; A Moldovan; M Dinescu; V S Teodorescu; M L Ciurea

doi:10.1088/1361-6528/abb2bf

Wafer-scale graphene-ferroelectric HfO₂/Ge-HfO₂/HfO₂ transistors acting as three-terminal memristors

Nanotechnology. 2020 Dec 4;31(49):495207. doi: 10.1088/1361-6528/abb2bf.

Authors

M Dragoman¹, A Dinescu, D Dragoman, C Palade, A Moldovan, M Dinescu, V S Teodorescu, M L Ciurea

Affiliation

¹ National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania.

PMID: 32946424
DOI: 10.1088/1361-6528/abb2bf

Abstract

In this paper we report a set of experiments at the wafer level regarding field-effect transistors with a graphene monolayer channel transferred on the ferroelectric HfO₂/Ge-HfO₂/HfO₂ three-layer structure. This kind of transistor has a switching ratio of 10³ between on and off states due to the bandgap in graphene induced by the ferroelectric structure. Both top and back gates effectively control the carriers' charge flow in graphene. The transistor acts as a three-terminal memristor, termed a memtransistor, with applications in neuromorphic computation.