Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Fedor M Kochetkov; Vladimir Neplokh; Viktoria A Mastalieva; Sungat Mukhangali; Aleksandr A Vorob'ev; Aleksandr V Uvarov; Filipp E Komissarenko; Dmitry M Mitin; Akanksha Kapoor; Joel Eymery; Nuño Amador-Mendez; Christophe Durand; Dmitry Krasnikov; Albert G Nasibulin; Maria Tchernycheva; Ivan S Mukhin

doi:10.3390/nano11061503

Stretchable Transparent Light-Emitting Diodes Based on InGaN/GaN Quantum Well Microwires and Carbon Nanotube Films

Nanomaterials (Basel). 2021 Jun 7;11(6):1503. doi: 10.3390/nano11061503.

Authors

Fedor M Kochetkov¹, Vladimir Neplokh^{1

2}, Viktoria A Mastalieva¹, Sungat Mukhangali¹, Aleksandr A Vorob'ev¹, Aleksandr V Uvarov¹, Filipp E Komissarenko³, Dmitry M Mitin^{1

2}, Akanksha Kapoor⁴, Joel Eymery⁵, Nuño Amador-Mendez⁶, Christophe Durand⁴, Dmitry Krasnikov⁷, Albert G Nasibulin^{7

8}, Maria Tchernycheva⁶, Ivan S Mukhin^{1

3}

Affiliations

¹ Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia.
² Institute of Machine Engineering, Materials and Transport, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia.
³ Department of Physics and Engineering, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia.
⁴ Nanophysics and Semiconductors Laboratory, University Grenoble Alpes, PHELIQS, IRIG, CEA, 38000 Gre-noble, France.
⁵ Nanostructures and Synchrotron Radiation Laboratory University Grenoble Alpes, MEM, IRIG, CEA, 38000 Grenoble, France.
⁶ Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France.
⁷ Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30/1, 121205 Moscow, Russia.
⁸ School of Chemical Engineering, Aalto University, P.O. Box 16100, FI-00076 Espoo, Finland.

Abstract

We propose and demonstrate both flexible and stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. InGaN/GaN core-shell microwires were grown by metal-organic vapor phase epitaxy, encapsulated into a polydimethylsiloxane film, and then released from the growth substrate. The fabricated free-standing membrane of light-emitting diodes with contacts of single-walled carbon nanotube films can stand up to 20% stretching while maintaining efficient operation. Membrane-based LEDs show less than 15% degradation of electroluminescence intensity after 20 cycles of stretching thus opening an avenue for highly deformable inorganic devices.

Keywords: InGaN; MOVPE; nanowires; single-walled carbon nanotubes; stretchable LED.

Abstract

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