Polyacrylic acid- b-polystyrene-passivated CsPbBr3 perovskite quantum dots with high photoluminescence quantum yield for light-emitting diodes

Jianhua Shen; Nan Meng; Jianzhuang Chen; Yihua Zhu; Xiaoling Yang; Yi Jia; Chunzhong Li

doi:10.1039/d2cc00051b

Polyacrylic acid- b-polystyrene-passivated CsPbBr₃ perovskite quantum dots with high photoluminescence quantum yield for light-emitting diodes

Chem Commun (Camb). 2022 Mar 29;58(26):4235-4238. doi: 10.1039/d2cc00051b.

Authors

Jianhua Shen¹, Nan Meng¹, Jianzhuang Chen¹, Yihua Zhu¹, Xiaoling Yang¹, Yi Jia², Chunzhong Li³

Affiliations

¹ Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, Frontiers Science Centre for Materiobiology and Dynamic Chemistry, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China. [email protected].
² High Technology Research and Development Center, Ministry of Science and Technology of the People's Republic of China, Beijing, 100044, China.
³ Shanghai Engineering Research Centre of Hierarchical Nanomaterials, School of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, China.

PMID: 35289816
DOI: 10.1039/d2cc00051b

Abstract

We report a novel strategy for the preparation of CsPbBr₃ perovskite quantum dots by polyacrylic acid-b-polystyrene ligands, which exhibited high stability and photoluminescence quantum yields. The fabricated white light-emitting diodes exhibited luminescence performance with the colour rendering index of 65.5, and a correlated colour temperature of 5464 K.