The substrate effect on the electronic transport of graphene with a density of defects of about 0.5% (0.5%G) is studied. Devices composed of monolayer 0.5%G, partially deposited on SiO2 and h-BN were used for transport measurements. We find that the 0.5%G on h-BN exhibits ambipolar transfer behaviours under ambient conditions, in comparison to unipolar p-type characters on SiO2 for the same flake. While intrinsic defects in graphene cause scattering, the use of h-BN as a substrate reduces p-doping.
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