Low-power multilevel resistive switching in β- Ga2O3based RRAM devices

Ravi Teja Velpula; Barsha Jain; Hieu Pham Trung Nguyen

doi:10.1088/1361-6528/aca418

Low-power multilevel resistive switching in β- Ga₂O₃based RRAM devices

Nanotechnology. 2022 Dec 2;34(7). doi: 10.1088/1361-6528/aca418.

Authors

Ravi Teja Velpula¹, Barsha Jain¹, Hieu Pham Trung Nguyen¹

Affiliation

¹ Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.

PMID: 36399780
DOI: 10.1088/1361-6528/aca418

Abstract

In this study, multilevel switching at low-power in Ti/TiN/Ga₂O₃/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximumR_off/R_onratio of ∼10³. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably highR_off/R_onratio is experimentally demonstrated, for the first time, for lower compliance currents at 10μA, 20μA and 50μA. The multi-bit resistive switching behavior of the Ga₂O₃RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.

Keywords: Ga2O3; RRAM; multilevel resistive switching.