Recent experimental and theoretical studies of single-layer FeSe film grown on SrTiO3 have revealed interface enhanced superconductivity, which opens up a pathway to promote the superconducting transition temperature. Here, to investigate the role of SrTiO3 substrate in epitaxial superconducting film, we grew a conventional superconductor β-Sn (bulk Tc ∼ 3.72 K) onto SrTiO3 substrate by molecular beam epitaxy. By employing scanning tunneling microscope and spectroscopic measurements, an enhanced Tc of 8.2 K is found for epitaxial β-Sn islands, deduced by fitting the temperature dependence of the gap values using the BCS formula. The observed interfacial charge injection and enhanced electron-phonon coupling are responsible for this Tc enhancement. Moreover, the critical field of 8.3 T exhibits a tremendous increase due to the suppression of the vortex formation. Therefore, the coexistence of enhanced superconductivity and high critical field of Sn islands demonstrates a feasible and effective route to improve the superconductivity by growing the islands of conventional superconductors on perovskite-type titanium oxide substrates.
Keywords: Interface-enhanced superconductivity; Molecular beam epitaxy; Scanning tunneling microscope; Scanning tunneling spectroscopy; Sn islands/SrTiO(3).
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