The construction of conductive scaffolds is demonstrated to be an ideal strategy to alleviate the volume expansion and dendrite growth of K metal anodes. Nevertheless, the heterogeneous top-bottom deposition behavior caused by incompatible electronic/ionic conductivity of three-dimensional (3D) skeleton severely hinders its application. Here, a K2 Se/Cu conducting layer is fabricated on the Cu foam so as to enhance ionic transport and weaken electronic conductivity of the skeleton. Then, an excellent simultaneous deposition behavior of K metal inside the host is obtained for the first time via tuning fast ionic transport and low electronic conductivity. The simultaneous deposition mode can not only utilize the entire 3D structure to accommodate the volume expansion during K deposition but also avoid the formation of K dendrites at high current and ultra-low temperature. Consequently, the symmetric cells present a long cycle lifespan over 1000 h with a low deposition overpotential of 80 mV at 1 mA cm-2 . Furthermore, the full cell matching with the perylene-tetracarboxylic dianhydride (PTCDA) cathode presents an outstanding cycle lifespan over 600 cycles at 5 C at -20°C. The proposed simultaneous deposition strategy provides a new design direction for the construction of dendrite-free K metal anodes.
Keywords: K 2Se/Cu layers; fast potassium ion conductivity; low migration barriers; low-temperature high-rate cycling; simultaneous deposition strategy.
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