Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS2 for a Neuromorphic Vision System

Nano Lett. 2023 Sep 13;23(17):8288-8294. doi: 10.1021/acs.nanolett.3c02499. Epub 2023 Aug 23.

Abstract

Controlling resistance by external fields provides fascinating opportunities for the development of novel devices and circuits, such as temperature-field-induced superconductors, magnetic-field-triggered giant magnetoresistance devices, and electric-field-operated flash memories. In this work, we demonstrate a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage in a single device, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.

Keywords: artificial visual synapses; light-induced nonvolatile resistive switching behavior; light-triggered phase transition; oxygen-doped MoS2.