Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Aswani Gopakumar Saraswathy Vilasam; Sonachand Adhikari; Bikesh Gupta; Sivacarendran Balendhran; Naoki Higashitarumizu; Julie Tournet; Lily Li; Ali Javey; Kenneth B Crozier; Siva Karuturi; Chennupati Jagadish; Hark Hoe Tan

doi:10.1088/1361-6528/acf3f1

Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition

Nanotechnology. 2023 Sep 18;34(49). doi: 10.1088/1361-6528/acf3f1.

Authors

Aswani Gopakumar Saraswathy Vilasam^{1

2}, Sonachand Adhikari^{1

2}, Bikesh Gupta¹, Sivacarendran Balendhran³, Naoki Higashitarumizu^{4

5}, Julie Tournet⁶, Lily Li¹, Ali Javey^{4

5}, Kenneth B Crozier^{3

7

8}, Siva Karuturi⁶, Chennupati Jagadish^{1

2}, Hark Hoe Tan^{1

2}

Affiliations

¹ Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
² ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.
³ School of Physics, The University of Melbourne, Victoria 3010, Parkville, Australia.
⁴ Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California, CA, 94720, United States of America.
⁵ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America.
⁶ School of Engineering, College of Engineering, Computing and Cybernetics, The Australian National University, Canberra, ACT 2600, Australia.
⁷ Department of Electrical and Electronic Engineering, The University of Melbourne, Victoria 3010, Parkville, Australia.
⁸ ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Melbourne, Victoria 3010, Australia.

PMID: 37625398
DOI: 10.1088/1361-6528/acf3f1

Abstract

Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1×10⁹cm^-2is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO₂/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm^-2/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.

Keywords: InAs; MOCVD; nanowires; polycrystalline thin film; van der waals epitaxy.

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