Bismuth sulfide (Bi2S3) possesses unique properties that make it a promising material for effective hydrogen sulfide (H2S) detection at room temperature. However, when exposed to light, the oxygen anions (O2-(ads)) adsorbed on the surface of Bi2S3 can react with photoinduced holes, ultimately reducing the ability to respond to H2S. In this study, Bi2S3/Sb2S3 heterostructures were synthesized, producing photoinduced oxygen anions (O2-(hv)) under visible light conditions, resulting in enhanced H2S sensing capability. The Bi2S3/Sb2S3 heterostructure sensor exhibits a two-fold increase in sensing response to 500 ppb H2S under in door light conditions relative to its performance in darkness. Additionally, the sensing response of the Bi2S3/Sb2S3 sensor (Ra/Rg= 23.3) was approximately five times higher than pure Bi2S3. The improved sensing performance of the Bi2S3/Sb2S3 heterostructures is attributable to the synergistic influence of the heterostructure configuration and light modulation, which enhances the H2S sensing performance by facilitating rapid charge transfer and increasing active sites (O2-(hv)) when exposed to visible light.
Keywords: Bi(2)S(3)/Sb(2)S(3) heterostructure; H(2)S gas sensor; Room temperature; Ultrasensitive; Visible light illumination.
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