High-throughput bend-strengths of ultra-small polysilicon MEMS components

Robert F Cook; Brad L Boyce; Lawrence H Friedman; Frank W DelRio

doi:10.1063/5.0049521

High-throughput bend-strengths of ultra-small polysilicon MEMS components

Appl Phys Lett. 2021 May;118(20):10.1063/5.0049521. doi: 10.1063/5.0049521.

Authors

Robert F Cook¹, Brad L Boyce², Lawrence H Friedman³, Frank W DelRio²

Affiliations

¹ Winterville, NC 28590, USA.
² Material, Physical, and Chemical Sciences Center, Sandia National Laboratories, Albuquerque, NM 87185, USA.
³ Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

Abstract

The strength distribution of polysilicon bend specimens, approximately 10 $μm$ in size, is measured using a high-throughput MEMS fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggest that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.

Grants and funding

9999-NIST/ImNIST/Intramural NIST DOC/United States