A critical issue hindering the potential applications of semiconductor mixed-halide perovskites is the phase segregation effect, wherein localized regions enriched with one type of halide anions would be formed upon continuous photogeneration of the excited-state charge carriers. These unexpected phases are capable of remixing again in the dark under the entropic driving force, the process of which is now being exclusively studied after the mixed-halide perovskites have arrived at the final stage of complete phase segregation. Here, we show that after the removal of laser excitation from a solid film of the mixed-halide perovskite nanocrystals (NCs) with partial phase segregation, the iodide- and bromide-rich regions can continuously grow in the dark for a prolonged time period of several minutes. We propose that this dark phase segregation is sustained by the local electric fields from the surface-trapped charge carriers, whose slow dissipation out of the mixed-halide perovskite NCs causes a delayed occurrence of the reversal phase remixing process.
Keywords: defect sites; local electric field; mixed-halide perovskite; nanocrystal; phase segregation; surface-trapped charge carriers.