Persistent ferromagnetic ground state in pristine and Ni-doped Fe3GaTe2 flakes

Ki-Hoon Son; Sehoon Oh; Junho Lee; Sobin Yun; Yunseo Shin; Shaohua Yan; Chaun Jang; Hong-Sub Lee; Hechang Lei; Se Young Park; Hyejin Ryu

doi:10.1186/s40580-024-00458-x

Persistent ferromagnetic ground state in pristine and Ni-doped Fe₃GaTe₂ flakes

Nano Converg. 2024 Dec 12;11(1):55. doi: 10.1186/s40580-024-00458-x.

Authors

Ki-Hoon Son^#^{1

2}, Sehoon Oh^#^{3

4}, Junho Lee¹, Sobin Yun¹, Yunseo Shin², Shaohua Yan^{5

6}, Chaun Jang¹, Hong-Sub Lee⁷, Hechang Lei^{8

9}, Se Young Park^{10

11}, Hyejin Ryu¹²

Affiliations

¹ Center for Semiconductor Technology, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
² Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 17104, South Korea.
³ Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
⁴ Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
⁵ School of Physics and Beiing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Renmin University of China, Beijing, 100872, China.
⁶ Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
⁷ Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 17104, South Korea. [email protected].
⁸ School of Physics and Beiing Key Laboratory of Optoelectronic Functional Materials MicroNano Devices, Renmin University of China, Beijing, 100872, China. [email protected].
⁹ Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China. [email protected].
¹⁰ Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea. [email protected].
¹¹ Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea. [email protected].
¹² Center for Semiconductor Technology, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea. [email protected].

^# Contributed equally.

Abstract

Room-temperature magnetism and its stability upon miniaturization are essential characteristics required for materials for spintronic devices and information storage. Among various candidates, Fe₃GaTe₂ stands out due to its high Curie temperature and strong perpendicular magnetic anisotropy (PMA), recently gaining large attention as one of the promising candidate materials for spintronics applications. In this study, we measured the thickness-dependent ferromagnetic properties of Fe₃GaTe₂ and (Fe_{1 - x}Ni_x)₃GaTe₂ (with x = 0.1) flakes. We observed that both pristine and Ni-doped Fe₃GaTe₂ exhibit persistent ferromagnetism, with only a minor decrease in T_C as the thickness is reduced to a few tens of nanometers. This capacity to retain robust ferromagnetic properties at reduced dimensions is highly advantageous for thin-film applications, which is crucial for the scaling of spintronic devices. Understanding and controlling thickness-dependent magnetic properties is fundamental to harnessing the full potential of Fe₃GaTe₂ in van der Waals magnetic heterostructures and advanced spintronic technologies.

Keywords: Fe3GaTe2; Magnetism; Ni doped Fe3GaTe2; Room-temperature van der waals ferromagnet; Thin film device application.

Abstract

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