Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption

Chia-Hung Wu; Chi-Wen Chen; Hung-Jung Shen; Hsiang-Yu Chuang; Hark Hoe Tan; Chennupati Jagadish; Tien-Chang Lu; Satoshi Ishii; Kuo-Ping Chen

doi:10.1002/advs.202412340

Reversible Carrier Modulation in InP Nanolasers by Ionic Liquid Gating with Low Energy Consumption

Adv Sci (Weinh). 2024 Dec 16:e2412340. doi: 10.1002/advs.202412340. Online ahead of print.

Authors

Chia-Hung Wu^{1

2}, Chi-Wen Chen³, Hung-Jung Shen⁴, Hsiang-Yu Chuang⁴, Hark Hoe Tan⁵, Chennupati Jagadish⁵, Tien-Chang Lu⁶, Satoshi Ishii², Kuo-Ping Chen^{1

4}

Affiliations

¹ College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 71150, Taiwan.
² International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
³ Institute of Photonic System, College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan, 71150, Taiwan.
⁴ Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, 300, Taiwan.
⁵ ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2600, Australia.
⁶ Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.

PMID: 39686615
DOI: 10.1002/advs.202412340

Abstract

Nanoscale light sources are demanded vigorously due to rapid development in photonic integrated circuits (PICs). III-V semiconductor nanowire (NW) lasers have manifested themselves as indispensable components in this field, associated with their extremely compact footprint and ultra-high optical gain within the 1D cavity. In this study, the carrier concentrations of indium phosphide (InP) NWs are actively controlled to modify their emissive properties at room temperature. The InP NW lasers can achieve repetitive switching between photoluminescence (PL) and lasing with an extinction ratio of 22-fold by applying a gate voltage of 3 V using ionic liquid (IL) as a dielectric layer. IL brings forth ultra-high capacitance due to the nanometer-wide electric double layer (EDL) between interfaces, mapping out gating efficiency of ≈100-fold compared to the conventional bottom gate configurations. This IL-embedded nanolaser device can be a promising platform for the advanced integrated nanophotonic system.

Keywords: InP nanolasers; carrier modulation; flexible substrate; ionic liquid.

Abstract

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