Sr3Zr2Cu4Q9 (Q = S and Se): two novel layered quaternary mixed transition metal chalcogenides

Dalton Trans. 2024 Dec 17. doi: 10.1039/d4dt02928c. Online ahead of print.

Abstract

Depending on their bandgaps, mixed metal layered chalcogenides are potential candidates for thermoelectric and photovoltaic applications. Herein, we reported the exploratory synthesis of Sr-Zr-Cu-Q (Q = S/Se) systems, resulting in the identification of two novel quaternary chalcogenides: Sr3Zr2Cu4S9 and Sr3Zr2Cu4Se9. These isoelectronic compounds (Sr3Zr2Cu4Q9) crystallized in two different structural types. The Sr3Zr2Cu4S9 structure (space group: P1̄) adopted the Ba3Zr2Cu4S9 structure type with eighteen unique atomic sites: 3 × Sr, 2 × Zr, 4 × Cu, and 9 × S. In contrast, the Sr3Zr2Cu4Se9 structure (P1̄) represented a unique structure type with nineteen unique atomic positions including one additional Cu site compared to the Sr3Zr2Cu4S9 structure. The sulfide structure was stoichiometric, whereas the selenide structure was found to be non-stoichiometric with three partially occupied Cu positions. The Sr3Zr2Cu4Q9 structures consisted of layers with the Sr2+ cations occupying the interstitial spaces. In both structures, the Zr atoms occupied distorted octahedral positions. A striking difference between the two structures resulted from the distinct bonding interactions between the Cu and Q atoms. The optical bandgap of polycrystalline Sr3Zr2Cu4S9 was 1.7(1) eV. Interestingly, resistivity measurements of polycrystalline Sr3Zr2Cu4Se9 revealed metallic/degenerate semiconducting behavior at low temperatures. The photovoltaic performance of semiconducting Sr3Zr2Cu4S9 demonstrated ∼24% increment in power conversion efficiency when incorporated into a TiO2/CdS photoanode due to its narrower bandgap, which increased the light-harvesting ability of the cell. We also explored the theoretical electronic structures, COHP, and Bader charges of the Sr3Zr2Cu4Q9 structures using DFT calculations.