Correction: Symmetrical Ligand's Fabricated Porous Silicon Surface Based Photoluminescence Sensor for Metal Detection and Entrapment

Affiliations

• ¹ Department of Chemistry, Thal University Bhakkar, Bhakkar, Pakistan. [email protected].
• ² Department of Chemistry, University of Sargodha, Sargodha, Pakistan. [email protected].
• ³ Advanced Radiation Technology Institute (ARTI), Korea Atomic Energy Research Institute, Jeongeup, 56212, Republic of Korea.
• ⁴ Radiation Science, University of Science and Technology, Daejeon, 34113, Republic of Korea.
• ⁵ College of Engineering, King Saud University, P.O.Box 800, Riyadh, 11421, Saudi Arabia.
• ⁶ Chemical Engineering Department, College of Engineering, King Saud University, P.O.Box 800, Riyadh, 11421, Saudi Arabia.
• ⁷ Kongju National University, Gongju, Chungnam, 314-701, Republic of Korea.
• ⁸ Advanced Radiation Technology Institute (ARTI), Korea Atomic Energy Research Institute, Jeongeup, 56212, Republic of Korea. [email protected].
• ⁹ Radiation Science, University of Science and Technology, Daejeon, 34113, Republic of Korea. [email protected].