Influence of Absorber Contents and Temperatures on the Dielectric Properties and Microwave Absorbing Performances of C@TiC/SiO₂ Composites

TiC provides a promising potential for high-temperature microwave absorbers due to its unique combination of thermal stability, high electrical conductivity, and robust structural integrity. C@TiC/SiO₂ composites were successfully fabricated using a simple blending and cold-pressing method. The effects of C@TiC's absorbent content and temperature on the dielectric and microwave absorption properties of C@TiC/SiO₂ composites were investigated. The addition of C@TiC from 10 wt.% to 30 wt.% not only endows the composites with a higher dielectric constant and dielectric loss, but also with a greater high-temperature stability in terms of dielectric and microwave absorption properties. The composite with 30 wt.%C@TiC demonstrates a strong microwave absorption capability with a minimum reflection loss (RL_min) of -55.87 dB, -48.49 dB, and -40.36 dB at room temperature, 50 °C, and 100 °C, respectively; the 50 wt.%C@TiC composite exhibits an enhanced high-temperature microwave absorption performance with an RL_min of -16.13 dB and -15.72 dB at 200 °C and 300 °C, respectively. This study demonstrates that the TiC-based absorbers present an innovative solution for high-temperature microwave absorption, providing stability, versatility, and adaptability in extreme operational environments.