Solution-processed semiconductor lasers are next-generation light sources for large-scale, bio-compatible and integrated photonics. However, overcoming their performance-cost trade-off to rival III-V laser functionalities is a long-standing challenge. Here, we demonstrate room-temperature continuous-wave perovskite polariton lasers exhibiting remarkably low thresholds of ~0.4 W cm-2, enabled by a variable single-crystal perovskite microcavity. The threshold outperforms state-of-the-art III-V lasers by ~30 times under optical pumping, and is exceptional among solution-processed lasers. The ultralow-threshold lasing arises from steady-state exciton-polariton condensation, a macroscopic quantum phenomenon akin to Bose-Einstein condensation. The steady-state condensation is attained by fine-tuning the cavity photon-exciton energy separation near the degeneracy point for strong light-matter interactions. These mechanisms enabled the initial demonstration of an indirectly injected perovskite laser chip powered by a gallium nitride light-emitting diode. Our findings create exciting avenues toward on-chip integration of solution-processed lasers, opening opportunities for lasing with ultralow energy consumption and unprecedented performance.