Lee G - Search Results

1

Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 x 4).

Kim H, Kim W, Lee G, Koo JY. Kim H, et al. Among authors: lee g. Phys Rev Lett. 2005 Feb 25;94(7):076102. doi: 10.1103/PhysRevLett.94.076102. Epub 2005 Feb 22. Phys Rev Lett. 2005. PMID: 15783829

2

Initial stage of carbon incorporation into si(001) and one-dimensional ordering of embedded carbon.

Kim W, Kim H, Lee G, Koo JY. Kim W, et al. Among authors: lee g. Phys Rev Lett. 2002 Sep 2;89(10):106102. doi: 10.1103/PhysRevLett.89.106102. Epub 2002 Aug 20. Phys Rev Lett. 2002. PMID: 12225207

3

Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks.

Hong YK, Bahng JH, Lee G, Kim H, Kim W, Lee S, Koo JY, Park JI, Lee WR, Cheon J. Hong YK, et al. Among authors: lee g, lee wr, lee s. Chem Commun (Camb). 2003 Dec 21;(24):3034-5. doi: 10.1039/b310098g. Chem Commun (Camb). 2003. PMID: 14703844

4

Room-temperature growth of Mg on Si(111): stepwise versus continuous deposition.

Lee D, Lee G, Kim S, Hwang C, Koo JY, Lee H. Lee D, et al. Among authors: lee g, lee h. J Phys Condens Matter. 2007 Jul 4;19(26):266004. doi: 10.1088/0953-8984/19/26/266004. Epub 2007 May 31. J Phys Condens Matter. 2007. PMID: 21694073

5

Intertwined Solitons and Impurities in a Quasi-One-Dimensional Charge-Density-Wave System: In/Si(111).

Lee G, Shim H, Hyun JM, Kim H. Lee G, et al. Phys Rev Lett. 2019 Jan 11;122(1):016102. doi: 10.1103/PhysRevLett.122.016102. Phys Rev Lett. 2019. PMID: 31012731

6

Comment on "Atomistic picture of charge density wave formation at surfaces".

Shim H, Yeo J, Lee G, Kim H. Shim H, et al. Among authors: lee g. Phys Rev Lett. 2013 Oct 4;111(14):149601. doi: 10.1103/PhysRevLett.111.149601. Epub 2013 Oct 1. Phys Rev Lett. 2013. PMID: 24138277 No abstract available.

7

Real-space observation of nanoscale inhomogeneities and fluctuations in a phase transition of a surface quasi-one-dimensional system: In/Si(111).

Lee G, Guo J, Plummer EW. Lee G, et al. Phys Rev Lett. 2005 Sep 9;95(11):116103. doi: 10.1103/PhysRevLett.95.116103. Epub 2005 Sep 8. Phys Rev Lett. 2005. PMID: 16197023

8

Intertwined electronic and structural phase transitions in the In/Si(111) interface.

Guo J, Lee G, Plummer EW. Guo J, et al. Among authors: lee g. Phys Rev Lett. 2005 Jul 22;95(4):046102. doi: 10.1103/PhysRevLett.95.046102. Epub 2005 Jul 22. Phys Rev Lett. 2005. PMID: 16090824

9

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice.

Ming F, Johnston S, Mulugeta D, Smith TS, Vilmercati P, Lee G, Maier TA, Snijders PC, Weitering HH. Ming F, et al. Among authors: lee g. Phys Rev Lett. 2017 Dec 29;119(26):266802. doi: 10.1103/PhysRevLett.119.266802. Epub 2017 Dec 27. Phys Rev Lett. 2017. PMID: 29328725

10

Reinvestigation of the alkali-metal-induced Ge(111)3 × 1 reconstruction on the basis of boundary structure observations.

Tomaszewska A, Shim H, Ahn C, Lee G. Tomaszewska A, et al. Among authors: lee g. Ultramicroscopy. 2011 May;111(6):392-6. doi: 10.1016/j.ultramic.2010.09.009. Epub 2010 Oct 13. Ultramicroscopy. 2011. PMID: 21035266

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