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Page 1
Electrical properties of self-assembled branched InAs nanowire junctions.
Suyatin DB, Sun J, Fuhrer A, Wallin D, Fröberg LE, Karlsson LS, Maximov I, Wallenberg LR, Samuelson L, Xu HQ. Suyatin DB, et al. Among authors: wallenberg lr. Nano Lett. 2008 Apr;8(4):1100-4. doi: 10.1021/nl073193y. Epub 2008 Mar 21. Nano Lett. 2008. PMID: 18355057
Position-controlled interconnected InAs nanowire networks.
Dick KA, Deppert K, Karlsson LS, Seifert W, Wallenberg LR, Samuelson L. Dick KA, et al. Among authors: wallenberg lr. Nano Lett. 2006 Dec;6(12):2842-7. doi: 10.1021/nl062035o. Nano Lett. 2006. PMID: 17163716
InAs1-xPx nanowires for device engineering.
Persson AI, Björk MT, Jeppesen S, Wagner JB, Wallenberg LR, Samuelson L. Persson AI, et al. Among authors: wallenberg lr. Nano Lett. 2006 Mar;6(3):403-7. doi: 10.1021/nl052181e. Nano Lett. 2006. PMID: 16522031
The morphology of axial and branched nanowire heterostructures.
Dick KA, Kodambaka S, Reuter MC, Deppert K, Samuelson L, Seifert W, Wallenberg LR, Ross FM. Dick KA, et al. Among authors: wallenberg lr. Nano Lett. 2007 Jun;7(6):1817-22. doi: 10.1021/nl0705900. Epub 2007 May 10. Nano Lett. 2007. PMID: 17489640
Electron trapping in InP nanowire FETs with stacking faults.
Wallentin J, Ek M, Wallenberg LR, Samuelson L, Borgström MT. Wallentin J, et al. Among authors: wallenberg lr. Nano Lett. 2012 Jan 11;12(1):151-5. doi: 10.1021/nl203213d. Epub 2011 Dec 7. Nano Lett. 2012. PMID: 22149329
Solid-phase diffusion mechanism for GaAs nanowire growth.
Persson AI, Larsson MW, Stenström S, Ohlsson BJ, Samuelson L, Wallenberg LR. Persson AI, et al. Among authors: wallenberg lr. Nat Mater. 2004 Oct;3(10):677-81. doi: 10.1038/nmat1220. Epub 2004 Sep 19. Nat Mater. 2004. PMID: 15378051
50 results