Stutzmann M - Search Results

1

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.

Arbiol J, Estradé S, Prades JD, Cirera A, Furtmayr F, Stark C, Laufer A, Stutzmann M, Eickhoff M, Gass MH, Bleloch AL, Peiró F, Morante JR. Arbiol J, et al. Among authors: stutzmann m. Nanotechnology. 2009 Apr 8;20(14):145704. doi: 10.1088/0957-4484/20/14/145704. Epub 2009 Mar 18. Nanotechnology. 2009. PMID: 19420534

2

Self-assembled GaN nanowires on diamond.

Schuster F, Furtmayr F, Zamani R, Magén C, Morante JR, Arbiol J, Garrido JA, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. Nano Lett. 2012 May 9;12(5):2199-204. doi: 10.1021/nl203872q. Epub 2012 Apr 18. Nano Lett. 2012. PMID: 22506554

3

p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.

Schuster F, Laumer B, Zamani RR, Magén C, Morante JR, Arbiol J, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. ACS Nano. 2014 May 27;8(5):4376-84. doi: 10.1021/nn406134e. Epub 2014 Apr 23. ACS Nano. 2014. PMID: 24720603

4

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

Schuster F, Hetzl M, Weiszer S, Garrido JA, de la Mata M, Magen C, Arbiol J, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. Nano Lett. 2015 Mar 11;15(3):1773-9. doi: 10.1021/nl504446r. Epub 2015 Feb 3. Nano Lett. 2015. PMID: 25633130 Free article.

5

The surface conductivity at the diamond/aqueous electrolyte interface.

Garrido JA, Härtl A, Dankerl M, Reitinger A, Eickhoff M, Helwig A, Müller G, Stutzmann M. Garrido JA, et al. Among authors: stutzmann m. J Am Chem Soc. 2008 Mar 26;130(12):4177-81. doi: 10.1021/ja078207g. Epub 2008 Mar 4. J Am Chem Soc. 2008. PMID: 18314982

6

Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates.

Howgate J, Schoell SJ, Hoeb M, Steins W, Baur B, Hertrich S, Nickel B, Sharp ID, Stutzmann M, Eickhoff M. Howgate J, et al. Among authors: stutzmann m. Adv Mater. 2010 Jun 25;22(24):2632-6. doi: 10.1002/adma.200903756. Adv Mater. 2010. PMID: 20461720 No abstract available.

7

Influence of environmental conditions and surface treatments on the photoluminescence properties of GaN nanowires and nanofins.

Kraut M, Pantle F, Wörle S, Sirotti E, Zeidler A, Eckmann F, Stutzmann M. Kraut M, et al. Among authors: stutzmann m. Nanotechnology. 2021 Sep 14;32(49). doi: 10.1088/1361-6528/ac1dd1. Nanotechnology. 2021. PMID: 34399419

8

Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxy.

Pantle F, Wörle S, Karlinger M, Rauh F, Kraut M, Stutzmann M. Pantle F, et al. Among authors: stutzmann m. Nanotechnology. 2023 Feb 13;34(17). doi: 10.1088/1361-6528/acb4f6. Nanotechnology. 2023. PMID: 36669201

9

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.

Hetzl M, Kraut M, Winnerl J, Francaviglia L, Döblinger M, Matich S, Fontcuberta I Morral A, Stutzmann M. Hetzl M, et al. Among authors: stutzmann m. Nano Lett. 2016 Nov 9;16(11):7098-7106. doi: 10.1021/acs.nanolett.6b03354. Epub 2016 Oct 24. Nano Lett. 2016. PMID: 27766884

10

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.

Hetzl M, Winnerl J, Francaviglia L, Kraut M, Döblinger M, Matich S, Fontcuberta I Morral A, Stutzmann M. Hetzl M, et al. Among authors: stutzmann m. Nanoscale. 2017 Jun 1;9(21):7179-7188. doi: 10.1039/c7nr00802c. Nanoscale. 2017. PMID: 28513695

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