Haick H - Search Results

1

Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces.

Bashouti MY, Paska Y, Puniredd SR, Stelzner T, Christiansen S, Haick H. Bashouti MY, et al. Among authors: haick h. Phys Chem Chem Phys. 2009 May 28;11(20):3845-8. doi: 10.1039/b820559k. Epub 2009 Mar 12. Phys Chem Chem Phys. 2009. PMID: 19440610

2

Electrical characteristics and chemical stability of non-oxidized, methyl-terminated silicon nanowires.

Haick H, Hurley PT, Hochbaum AI, Yang P, Lewis NS. Haick H, et al. J Am Chem Soc. 2006 Jul 19;128(28):8990-1. doi: 10.1021/ja056785w. J Am Chem Soc. 2006. PMID: 16834345

3

Highly stable organic modification of Si(111) surfaces: towards reacting Si with further functionalities while preserving the desirable chemical properties of full Si-C atop site terminations.

Puniredd SR, Assad O, Haick H. Puniredd SR, et al. Among authors: haick h. J Am Chem Soc. 2008 Jul 23;130(29):9184-5. doi: 10.1021/ja800855s. Epub 2008 Jun 27. J Am Chem Soc. 2008. PMID: 18582044

4

Highly stable organic monolayers for reacting silicon with further functionalities: the effect of the C-C bond nearest the silicon surface.

Puniredd SR, Assad O, Haick H. Puniredd SR, et al. Among authors: haick h. J Am Chem Soc. 2008 Oct 15;130(41):13727-34. doi: 10.1021/ja804674z. Epub 2008 Sep 20. J Am Chem Soc. 2008. PMID: 18803387

5

Stable scaffolds for reacting Si nanowires with further organic functionalities while preserving Si-C passivation of surface sites.

Assad O, Puniredd SR, Stelzner T, Christiansen S, Haick H. Assad O, et al. Among authors: haick h. J Am Chem Soc. 2008 Dec 31;130(52):17670-1. doi: 10.1021/ja807888k. J Am Chem Soc. 2008. PMID: 19108698

6

Molecular electronics at metal/semiconductor junctions. Si inversion by sub-nanometer molecular films.

Yaffe O, Scheres L, Puniredd SR, Stein N, Biller A, Lavan RH, Shpaisman H, Zuilhof H, Haick H, Cahen D, Vilan A. Yaffe O, et al. Among authors: haick h. Nano Lett. 2009 Jun;9(6):2390-4. doi: 10.1021/nl900953z. Nano Lett. 2009. PMID: 19438192

7

Tuning the electrical properties of Si nanowire field-effect transistors by molecular engineering.

Bashouti MY, Tung RT, Haick H. Bashouti MY, et al. Among authors: haick h. Small. 2009 Dec;5(23):2761-9. doi: 10.1002/smll.200901402. Small. 2009. PMID: 19771570

8

Systematic cross-linking changes within a self-assembled monolayer in a nanogap junction: a tool for investigating the intermolecular electronic coupling.

Paska Y, Haick H. Paska Y, et al. Among authors: haick h. J Am Chem Soc. 2010 Feb 17;132(6):1774-5. doi: 10.1021/ja910126s. J Am Chem Soc. 2010. PMID: 20088587

9

Catalyst-free functionalization for versatile modification of nonoxidized silicon structures.

Puniredd SR, Assad O, Stelzner T, Christiansen S, Haick H. Puniredd SR, et al. Among authors: haick h. Langmuir. 2011 Apr 19;27(8):4764-71. doi: 10.1021/la2002546. Epub 2011 Mar 22. Langmuir. 2011. PMID: 21425837

10

Enhanced sensing of nonpolar volatile organic compounds by silicon nanowire field effect transistors.

Paska Y, Stelzner T, Christiansen S, Haick H. Paska Y, et al. Among authors: haick h. ACS Nano. 2011 Jul 26;5(7):5620-6. doi: 10.1021/nn201184c. Epub 2011 Jun 7. ACS Nano. 2011. PMID: 21648442

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