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Giant, level-dependent g factors in InSb nanowire quantum dots.
Nilsson HA, Caroff P, Thelander C, Larsson M, Wagner JB, Wernersson LE, Samuelson L, Xu HQ. Nilsson HA, et al. Among authors: wagner jb. Nano Lett. 2009 Sep;9(9):3151-6. doi: 10.1021/nl901333a. Nano Lett. 2009. PMID: 19736971
High-performance single nanowire tunnel diodes.
Wallentin J, Persson JM, Wagner JB, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Among authors: wagner jb. Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b. Nano Lett. 2010. PMID: 20163125
Phase segregation in AlInP shells on GaAs nanowires.
Sköld N, Wagner JB, Karlsson G, Hernán T, Seifert W, Pistol ME, Samuelson L. Sköld N, et al. Among authors: wagner jb. Nano Lett. 2006 Dec;6(12):2743-7. doi: 10.1021/nl061692d. Nano Lett. 2006. PMID: 17163698
Transients in the formation of nanowire heterostructures.
Fröberg LE, Wacaser BA, Wagner JB, Jeppesen S, Ohlsson BJ, Deppert K, Samuelson L. Fröberg LE, et al. Among authors: wagner jb. Nano Lett. 2008 Nov;8(11):3815-8. doi: 10.1021/nl802149v. Epub 2008 Sep 24. Nano Lett. 2008. PMID: 18811210
InAs1-xPx nanowires for device engineering.
Persson AI, Björk MT, Jeppesen S, Wagner JB, Wallenberg LR, Samuelson L. Persson AI, et al. Among authors: wagner jb. Nano Lett. 2006 Mar;6(3):403-7. doi: 10.1021/nl052181e. Nano Lett. 2006. PMID: 16522031
117 results