Aagesen M - Search Results

1

Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements.

Krogstrup P, Yamasaki J, Sørensen CB, Johnson E, Wagner JB, Pennington R, Aagesen M, Tanaka N, Nygård J. Krogstrup P, et al. Among authors: aagesen m. Nano Lett. 2009 Nov;9(11):3689-93. doi: 10.1021/nl901348d. Nano Lett. 2009. PMID: 19842690

2

Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots.

Sand-Jespersen T, Paaske J, Andersen BM, Grove-Rasmussen K, Jørgensen HI, Aagesen M, Sørensen CB, Lindelof PE, Flensberg K, Nygård J. Sand-Jespersen T, et al. Among authors: aagesen m. Phys Rev Lett. 2007 Sep 21;99(12):126603. doi: 10.1103/PhysRevLett.99.126603. Epub 2007 Sep 19. Phys Rev Lett. 2007. PMID: 17930535

3

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.

Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE. Aagesen M, et al. Nat Nanotechnol. 2007 Dec;2(12):761-4. doi: 10.1038/nnano.2007.378. Epub 2007 Nov 25. Nat Nanotechnol. 2007. PMID: 18654427

4

Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots.

Csonka S, Hofstetter L, Freitag F, Oberholzer S, Schönenberger C, Jespersen TS, Aagesen M, Nygård J. Csonka S, et al. Among authors: aagesen m. Nano Lett. 2008 Nov;8(11):3932-5. doi: 10.1021/nl802418w. Epub 2008 Oct 21. Nano Lett. 2008. PMID: 18937519

5

Ferromagnetic proximity effect in a ferromagnet-quantum-dot-superconductor device.

Hofstetter L, Geresdi A, Aagesen M, Nygård J, Schönenberger C, Csonka S. Hofstetter L, et al. Among authors: aagesen m. Phys Rev Lett. 2010 Jun 18;104(24):246804. doi: 10.1103/PhysRevLett.104.246804. Epub 2010 Jun 18. Phys Rev Lett. 2010. PMID: 20867324

6

Impact of the liquid phase shape on the structure of III-V nanowires.

Krogstrup P, Curiotto S, Johnson E, Aagesen M, Nygård J, Chatain D. Krogstrup P, et al. Among authors: aagesen m. Phys Rev Lett. 2011 Mar 25;106(12):125505. doi: 10.1103/PhysRevLett.106.125505. Epub 2011 Mar 22. Phys Rev Lett. 2011. PMID: 21517326

7

Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).

Madsen MH, Aagesen M, Krogstrup P, Sørensen C, Nygård J. Madsen MH, et al. Among authors: aagesen m. Nanoscale Res Lett. 2011 Aug 31;6(1):516. doi: 10.1186/1556-276X-6-516. Nanoscale Res Lett. 2011. PMID: 21880130 Free PMC article.

8

Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.

Holm JV, Jørgensen HI, Krogstrup P, Nygård J, Liu H, Aagesen M. Holm JV, et al. Among authors: aagesen m. Nat Commun. 2013;4:1498. doi: 10.1038/ncomms2510. Nat Commun. 2013. PMID: 23422666 Free article.

9

Polarity-Driven Quasi-3-Fold Composition Symmetry of Self-Catalyzed III-V-V Ternary Core-Shell Nanowires.

Zhang Y, Sanchez AM, Wu J, Aagesen M, Holm JV, Beanland R, Ward T, Liu H. Zhang Y, et al. Among authors: aagesen m. Nano Lett. 2015 May 13;15(5):3128-33. doi: 10.1021/acs.nanolett.5b00188. Epub 2015 Apr 2. Nano Lett. 2015. PMID: 25822399

10

Ten-Fold Enhancement of InAs Nanowire Photoluminescence Emission with an InP Passivation Layer.

Jurczak P, Zhang Y, Wu J, Sanchez AM, Aagesen M, Liu H. Jurczak P, et al. Among authors: aagesen m. Nano Lett. 2017 Jun 14;17(6):3629-3633. doi: 10.1021/acs.nanolett.7b00803. Epub 2017 Jun 1. Nano Lett. 2017. PMID: 28535064

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