Enhancing Uniformity, Read Voltage Margin, and Retention in Three-Dimensional and Self-Rectifying Vertical Pt/Ta2O5/Al2O3/TiN Memristors.
Park TW, Moon J, Shin DH, Kim HJ, Kim SS, Cho JM, Park H, Woo KS, Kim DY, Cheong S, Song H, Shin JH, Lee SH, Ghenzi N, Hwang CS.
Park TW, et al. Among authors: cheong s.
ACS Appl Mater Interfaces. 2024 Nov 12. doi: 10.1021/acsami.4c15598. Online ahead of print.
ACS Appl Mater Interfaces. 2024.
PMID: 39531380