Jo MH - Search Results

1

On-nanowire band-graded Si:Ge photodetectors.

Kim CJ, Lee HS, Cho YJ, Yang JE, Lee RR, Lee JK, Jo MH. Kim CJ, et al. Among authors: jo mh. Adv Mater. 2011 Feb 22;23(8):1025-9. doi: 10.1002/adma.201004034. Epub 2011 Jan 14. Adv Mater. 2011. PMID: 21341319 No abstract available.

2

Band-gap modulation in single-crystalline Si1-xGex nanowires.

Yang JE, Jin CB, Kim CJ, Jo MH. Yang JE, et al. Among authors: jo mh. Nano Lett. 2006 Dec;6(12):2679-84. doi: 10.1021/nl0614821. Nano Lett. 2006. PMID: 17163687

3

The role of NiOx overlayers on spontaneous growth of NiSix nanowires from Ni seed layers.

Kang K, Kim SK, Kim CJ, Jo MH. Kang K, et al. Among authors: jo mh. Nano Lett. 2008 Feb;8(2):431-6. doi: 10.1021/nl072326c. Epub 2008 Jan 12. Nano Lett. 2008. PMID: 18189435

4

Electrical detection of VEGFs for cancer diagnoses using anti-vascular endotherial growth factor aptamer-modified Si nanowire FETs.

Lee HS, Kim KS, Kim CJ, Hahn SK, Jo MH. Lee HS, et al. Among authors: jo mh. Biosens Bioelectron. 2009 Feb 15;24(6):1801-5. doi: 10.1016/j.bios.2008.08.036. Epub 2008 Aug 29. Biosens Bioelectron. 2009. PMID: 18835770

5

Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities.

Heo K, Cho E, Yang JE, Kim MH, Lee M, Lee BY, Kwon SG, Lee MS, Jo MH, Choi HJ, Hyeon T, Hong S. Heo K, et al. Among authors: jo mh. Nano Lett. 2008 Dec;8(12):4523-7. doi: 10.1021/nl802570m. Nano Lett. 2008. PMID: 19367934

6

The fabrication, characterization and application of aptamer-functionalized Si-nanowire FET biosensors.

Kim KS, Lee HS, Yang JA, Jo MH, Hahn SK. Kim KS, et al. Among authors: jo mh. Nanotechnology. 2009 Jun 10;20(23):235501. doi: 10.1088/0957-4484/20/23/235501. Epub 2009 May 18. Nanotechnology. 2009. PMID: 19448297

7

Directionally integrated VLS nanowire growth in a local temperature gradient.

Lee G, Woo YS, Yang JE, Lee D, Kim CJ, Jo MH. Lee G, et al. Among authors: jo mh. Angew Chem Int Ed Engl. 2009;48(40):7366-70. doi: 10.1002/anie.200902451. Angew Chem Int Ed Engl. 2009. PMID: 19728351 No abstract available.

8

Large-scale assembly of highly flexible low-noise devices based on silicon nanowires.

Heo K, Park JW, Yang JE, Koh J, Kwon JH, Jhon YM, Kim M, Jo MH, Hong S. Heo K, et al. Among authors: jo mh. Nanotechnology. 2010 Apr 9;21(14):145302. doi: 10.1088/0957-4484/21/14/145302. Epub 2010 Mar 10. Nanotechnology. 2010. PMID: 20215655

9

Diameter-dependent internal gain in ohmic Ge nanowire photodetectors.

Kim CJ, Lee HS, Cho YJ, Kang K, Jo MH. Kim CJ, et al. Among authors: jo mh. Nano Lett. 2010 Jun 9;10(6):2043-8. doi: 10.1021/nl100136b. Nano Lett. 2010. PMID: 20420371

10

Determination of the photocarrier diffusion length in intrinsic Ge nanowires.

Shin YS, Lee D, Lee HS, Cho YJ, Kim CJ, Jo MH. Shin YS, et al. Among authors: jo mh. Opt Express. 2011 Mar 28;19(7):6119-24. doi: 10.1364/OE.19.006119. Opt Express. 2011. PMID: 21451635 Free article.

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