Chalker P - Search Results

1

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P, King P. Zhao C, et al. Among authors: chalker p. Nanoscale Res Lett. 2013 Apr 15;8(1):172. doi: 10.1186/1556-276X-8-172. Nanoscale Res Lett. 2013. PMID: 23587419 Free PMC article.

2

Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P. Zhao C, et al. Among authors: chalker p. Nanoscale Res Lett. 2013 Nov 1;8(1):456. doi: 10.1186/1556-276X-8-456. Nanoscale Res Lett. 2013. PMID: 24180696 Free PMC article.

3

Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient.

Zhao CZ, Werner M, Taylor S, Chalker PR, Jones AC, Zhao C. Zhao CZ, et al. Among authors: chalker pr. Nanoscale Res Lett. 2011 Dec;6(1):48. doi: 10.1007/s11671-010-9782-z. Epub 2010 Sep 30. Nanoscale Res Lett. 2011. PMID: 27502670 Free PMC article.

4

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements.

Tao J, Zhao CZ, Zhao C, Taechakumput P, Werner M, Taylor S, Chalker PR. Tao J, et al. Among authors: chalker pr. Materials (Basel). 2012 Jun 1;5(6):1005-1032. doi: 10.3390/ma5061005. Materials (Basel). 2012. PMID: 28817021 Free PMC article. Review.

5

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

Lu Q, Zhao C, Mu Y, Zhao CZ, Taylor S, Chalker PR. Lu Q, et al. Among authors: chalker pr. Materials (Basel). 2015 Jul 29;8(8):4829-4842. doi: 10.3390/ma8084829. Materials (Basel). 2015. PMID: 28793475 Free PMC article.

6

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm.

Zhao C, Zhao CZ, Taylor S, Chalker PR. Zhao C, et al. Among authors: chalker pr. Materials (Basel). 2014 Jul 15;7(7):5117-5145. doi: 10.3390/ma7075117. Materials (Basel). 2014. PMID: 28788122 Free PMC article. Review.

7

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement.

Zhao C, Zhao CZ, Lu Q, Yan X, Taylor S, Chalker PR. Zhao C, et al. Among authors: chalker pr. Materials (Basel). 2014 Oct 13;7(10):6965-6981. doi: 10.3390/ma7106965. Materials (Basel). 2014. PMID: 28788225 Free PMC article.

8

Electrical Properties and Interfacial Studies of Hf_xTi_1-xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.

Lu Q, Mu Y, Roberts JW, Althobaiti M, Dhanak VR, Wu J, Zhao C, Zhao CZ, Zhang Q, Yang L, Mitrovic IZ, Taylor S, Chalker PR. Lu Q, et al. Among authors: chalker pr. Materials (Basel). 2015 Dec 2;8(12):8169-8182. doi: 10.3390/ma8125454. Materials (Basel). 2015. PMID: 28793705 Free PMC article.

9

Ce(IV) complexes with donor-functionalized alkoxide ligands: improved precursors for chemical vapor deposition of CeO2.

Aspinall HC, Bacsa J, Jones AC, Wrench JS, Black K, Chalker PR, King PJ, Marshall P, Werner M, Davies HO, Odedra R. Aspinall HC, et al. Among authors: chalker pr. Inorg Chem. 2011 Nov 21;50(22):11644-52. doi: 10.1021/ic201593s. Epub 2011 Oct 21. Inorg Chem. 2011. PMID: 22017450

10

The optical properties of vertically aligned ZnO nanowires deposited using a dimethylzinc adduct.

Black K, Jones AC, Alexandrou I, Heys PN, Chalker PR. Black K, et al. Among authors: chalker pr. Nanotechnology. 2010 Jan 29;21(4):045701. doi: 10.1088/0957-4484/21/4/045701. Epub 2009 Dec 10. Nanotechnology. 2010. PMID: 20009167

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