Xu F - Search Results

1

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact.

Lu F, Tang N, Huang S, Larsson M, Maximov I, Graczyk M, Duan J, Liu S, Ge W, Xu F, Shen B. Lu F, et al. Among authors: xu f. Nano Lett. 2013 Oct 9;13(10):4654-8. doi: 10.1021/nl401724m. Epub 2013 Oct 1. Nano Lett. 2013. PMID: 24041238

2

Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al{x}Ga{1-x}N/GaN heterostructures at room temperature.

He XW, Shen B, Chen YH, Zhang Q, Han K, Yin CM, Tang N, Xu FJ, Tang CG, Yang ZJ, Qin ZX, Zhang GY, Wang ZG. He XW, et al. Among authors: xu fj. Phys Rev Lett. 2008 Oct 3;101(14):147402. doi: 10.1103/PhysRevLett.101.147402. Epub 2008 Oct 3. Phys Rev Lett. 2008. PMID: 18851572

3

Enhanced wet etching of patterned GaN with ion implantation.

Gao Y, Lan C, Xue J, Yan S, Wang Y, Xu F, Shen B, Chu PK. Gao Y, et al. Among authors: xu f. J Nanosci Nanotechnol. 2011 Dec;11(12):10949-53. doi: 10.1166/jnn.2011.4055. J Nanosci Nanotechnol. 2011. PMID: 22409032

4

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Yin C, Yuan H, Wang X, Liu S, Zhang S, Tang N, Xu F, Chen Z, Shimotani H, Iwasa Y, Chen Y, Ge W, Shen B. Yin C, et al. Among authors: xu f. Nano Lett. 2013 May 8;13(5):2024-9. doi: 10.1021/nl400153p. Epub 2013 Apr 29. Nano Lett. 2013. PMID: 23614498

5

Spin transport study in a Rashba spin-orbit coupling system.

Mei F, Zhang S, Tang N, Duan J, Xu F, Chen Y, Ge W, Shen B. Mei F, et al. Among authors: xu f. Sci Rep. 2014 Feb 7;4:4030. doi: 10.1038/srep04030. Sci Rep. 2014. PMID: 24504193 Free PMC article.

6

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement.

Guo L, Wang XQ, Zheng XT, Yang XL, Xu FJ, Tang N, Lu LW, Ge WK, Shen B, Dmowski LH, Suski T. Guo L, et al. Among authors: xu fj. Sci Rep. 2014 Mar 13;4:4371. doi: 10.1038/srep04371. Sci Rep. 2014. PMID: 24621830 Free PMC article.

7

Identification of helicity-dependent photocurrents from topological surface states in Bi2Se3 gated by ionic liquid.

Duan J, Tang N, He X, Yan Y, Zhang S, Qin X, Wang X, Yang X, Xu F, Chen Y, Ge W, Shen B. Duan J, et al. Among authors: xu f. Sci Rep. 2014 May 8;4:4889. doi: 10.1038/srep04889. Sci Rep. 2014. PMID: 24809330 Free PMC article.

8

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

Wang J, Xu F, Zhang X, An W, Li XZ, Song J, Ge W, Tian G, Lu J, Wang X, Tang N, Yang Z, Li W, Wang W, Jin P, Chen Y, Shen B. Wang J, et al. Among authors: xu f. Sci Rep. 2014 Oct 6;4:6521. doi: 10.1038/srep06521. Sci Rep. 2014. PMID: 25283334 Free PMC article.

9

Intersubband Transition in GaN/InGaN Multiple Quantum Wells.

Chen G, Wang XQ, Rong X, Wang P, Xu FJ, Tang N, Qin ZX, Chen YH, Shen B. Chen G, et al. Among authors: xu fj. Sci Rep. 2015 Jun 19;5:11485. doi: 10.1038/srep11485. Sci Rep. 2015. PMID: 26089133 Free PMC article.

10

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

He C, Qin Z, Xu F, Hou M, Zhang S, Zhang L, Wang X, Ge W, Shen B. He C, et al. Among authors: xu f. Sci Rep. 2015 Aug 12;5:13046. doi: 10.1038/srep13046. Sci Rep. 2015. PMID: 26267249 Free PMC article.

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