Stutzmann M - Search Results

1

p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity.

Schuster F, Laumer B, Zamani RR, Magén C, Morante JR, Arbiol J, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. ACS Nano. 2014 May 27;8(5):4376-84. doi: 10.1021/nn406134e. Epub 2014 Apr 23. ACS Nano. 2014. PMID: 24720603

2

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.

Arbiol J, Estradé S, Prades JD, Cirera A, Furtmayr F, Stark C, Laufer A, Stutzmann M, Eickhoff M, Gass MH, Bleloch AL, Peiró F, Morante JR. Arbiol J, et al. Among authors: stutzmann m. Nanotechnology. 2009 Apr 8;20(14):145704. doi: 10.1088/0957-4484/20/14/145704. Epub 2009 Mar 18. Nanotechnology. 2009. PMID: 19420534

3

Self-assembled GaN nanowires on diamond.

Schuster F, Furtmayr F, Zamani R, Magén C, Morante JR, Arbiol J, Garrido JA, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. Nano Lett. 2012 May 9;12(5):2199-204. doi: 10.1021/nl203872q. Epub 2012 Apr 18. Nano Lett. 2012. PMID: 22506554

4

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

Schuster F, Hetzl M, Weiszer S, Garrido JA, de la Mata M, Magen C, Arbiol J, Stutzmann M. Schuster F, et al. Among authors: stutzmann m. Nano Lett. 2015 Mar 11;15(3):1773-9. doi: 10.1021/nl504446r. Epub 2015 Feb 3. Nano Lett. 2015. PMID: 25633130 Free article.

5

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.

Hetzl M, Kraut M, Winnerl J, Francaviglia L, Döblinger M, Matich S, Fontcuberta I Morral A, Stutzmann M. Hetzl M, et al. Among authors: stutzmann m. Nano Lett. 2016 Nov 9;16(11):7098-7106. doi: 10.1021/acs.nanolett.6b03354. Epub 2016 Oct 24. Nano Lett. 2016. PMID: 27766884

6

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

Hetzl M, Kraut M, Hoffmann T, Stutzmann M. Hetzl M, et al. Among authors: stutzmann m. Nano Lett. 2017 Jun 14;17(6):3582-3590. doi: 10.1021/acs.nanolett.7b00741. Epub 2017 May 31. Nano Lett. 2017. PMID: 28535070

7

GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond.

Hetzl M, Wierzbowski J, Hoffmann T, Kraut M, Zuerbig V, Nebel CE, Müller K, Finley JJ, Stutzmann M. Hetzl M, et al. Among authors: stutzmann m. Nano Lett. 2018 Jun 13;18(6):3651-3660. doi: 10.1021/acs.nanolett.8b00763. Epub 2018 May 30. Nano Lett. 2018. PMID: 29792713

8

The diamond/aqueous electrolyte interface: an impedance investigation.

Garrido JA, Nowy S, Härtl A, Stutzmann M. Garrido JA, et al. Among authors: stutzmann m. Langmuir. 2008 Apr 15;24(8):3897-904. doi: 10.1021/la703413y. Epub 2008 Mar 7. Langmuir. 2008. PMID: 18324855

9

Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC.

Dietmueller R, Nesswetter H, Schoell SJ, Sharp ID, Stutzmann M. Dietmueller R, et al. Among authors: stutzmann m. ACS Appl Mater Interfaces. 2011 Nov;3(11):4286-91. doi: 10.1021/am200952s. Epub 2011 Oct 12. ACS Appl Mater Interfaces. 2011. PMID: 21936559

10

Organic functionalization of 3C-SiC surfaces.

Schoell SJ, Sachsenhauser M, Oliveros A, Howgate J, Stutzmann M, Brandt MS, Frewin CL, Saddow SE, Sharp ID. Schoell SJ, et al. Among authors: stutzmann m. ACS Appl Mater Interfaces. 2013 Feb;5(4):1393-9. doi: 10.1021/am302786n. Epub 2013 Feb 7. ACS Appl Mater Interfaces. 2013. PMID: 23357505

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