Wang H - Search Results

1

On Valence-Band Splitting in Layered MoS2.

Zhang Y, Li H, Wang H, Liu R, Zhang SL, Qiu ZJ. Zhang Y, et al. Among authors: wang h. ACS Nano. 2015 Aug 25;9(8):8514-9. doi: 10.1021/acsnano.5b03505. Epub 2015 Aug 4. ACS Nano. 2015. PMID: 26222731

2

Photothermoelectric and photovoltaic effects both present in MoS2.

Zhang Y, Li H, Wang L, Wang H, Xie X, Zhang SL, Liu R, Qiu ZJ. Zhang Y, et al. Among authors: wang h, wang l. Sci Rep. 2015 Jan 21;5:7938. doi: 10.1038/srep07938. Sci Rep. 2015. PMID: 25605348 Free PMC article.

3

Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.

Zhang Y, Li H, Wang H, Xie H, Liu R, Zhang SL, Qiu ZJ. Zhang Y, et al. Among authors: wang h. Sci Rep. 2016 Jul 12;6:29615. doi: 10.1038/srep29615. Sci Rep. 2016. PMID: 27403803 Free PMC article.

4

Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition.

Zhang X, Wu T, Jiang Q, Wang H, Zhu H, Chen Z, Jiang R, Niu T, Li Z, Zhang Y, Qiu Z, Yu G, Li A, Qiao S, Wang H, Yu Q, Xie X. Zhang X, et al. Among authors: wang h. Small. 2019 May;15(22):e1805395. doi: 10.1002/smll.201805395. Epub 2019 Apr 3. Small. 2019. PMID: 30942946

5

Remarkable quality improvement of as-grown monolayer MoS₂ by sulfur vapor pretreatment of SiO₂/Si substrates.

Yang P , Shan Y , Chen J , Ekoya G , Han J , Qiu ZJ , Sun J , Chen F , Wang H , Bao W , Hu L , Zhang RJ , Liu R , Cong C . Yang P , et al. Among authors: wang h. Nanoscale. 2020 Jan 23;12(3):1958-1966. doi: 10.1039/c9nr09129g. Nanoscale. 2020. PMID: 31909408

6

Weak localization in graphene sandwiched by aligned h-BN flakes.

Wang X, Wang H, Chen L, He L, Chen C, Jiang C, Qiu Z, Wang H, Xie X. Wang X, et al. Among authors: wang h. Nanotechnology. 2020 May 22;31(21):215712. doi: 10.1088/1361-6528/ab7444. Epub 2020 Feb 10. Nanotechnology. 2020. PMID: 32038038

7

Twist-angle-dependent momentum-space direct and indirect interlayer excitons in WSe₂/WS₂ heterostructure.

Chen J, Yue X, Shan Y, Wang H, Han J, Wang H, Sheng C, Hu L, Liu R, Yang W, Qiu ZJ, Cong C. Chen J, et al. Among authors: wang h. RSC Adv. 2023 Jun 15;13(26):18099-18107. doi: 10.1039/d3ra02952b. eCollection 2023 Jun 9. RSC Adv. 2023. PMID: 37323440 Free PMC article.

8

Imaging Dual-Moiré Lattices in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride Using Microwave Impedance Microscopy.

Huang X, Chen L, Tang S, Jiang C, Chen C, Wang H, Shen ZX, Wang H, Cui YT. Huang X, et al. Among authors: wang h. Nano Lett. 2021 May 26;21(10):4292-4298. doi: 10.1021/acs.nanolett.1c00601. Epub 2021 May 5. Nano Lett. 2021. PMID: 33949872

9

Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride.

Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal H, Palumbo F, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, Lanza M. Jiang L, et al. Among authors: wang h. ACS Appl Mater Interfaces. 2017 Nov 15;9(45):39758-39770. doi: 10.1021/acsami.7b10948. Epub 2017 Nov 1. ACS Appl Mater Interfaces. 2017. PMID: 29039199

10

Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO₂ Thin Film.

Ren Z, Cheng L, Hu L, Liu C, Jiang C, Yang S, Ma Z, Zhou C, Wang H, Zhu X, Sun Y, Sheng Z. Ren Z, et al. Among authors: wang h. ACS Appl Mater Interfaces. 2020 Oct 28;12(43):48811-48819. doi: 10.1021/acsami.0c15297. Epub 2020 Oct 13. ACS Appl Mater Interfaces. 2020. PMID: 32975107

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