Wang J - Search Results

1

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

Liu Z, Yi X, Yu Z, Yuan G, Liu Y, Wang J, Li J, Lu N, Ferguson I, Zhang Y. Liu Z, et al. Among authors: wang j. Sci Rep. 2016 Jan 18;6:19537. doi: 10.1038/srep19537. Sci Rep. 2016. PMID: 26777294 Free PMC article.

2

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.

Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F. Wei T, et al. Among authors: wang g, wang j. Opt Express. 2011 Jan 17;19(2):1065-71. doi: 10.1364/OE.19.001065. Opt Express. 2011. PMID: 21263645 Free article.

3

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Ma J, Wang L, Liu Z, Yuan G, Ji X, Ma P, Wang J, Yi X, Wang G, Li J. Ma J, et al. Among authors: wang g, wang l, wang j. Opt Express. 2013 Feb 11;21(3):3547-56. doi: 10.1364/OE.21.003547. Opt Express. 2013. PMID: 23481812 Free article.

4

Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer.

Fu B, Kang J, Wei T, Liu Z, Liu Z, Liu N, Xiong Z, Li Z, Wei X, Lu H, Yi X, Li J, Wang J. Fu B, et al. Among authors: wang j. Opt Express. 2014 Aug 25;22 Suppl 5:A1284-91. doi: 10.1364/OE.22.0A1284. Opt Express. 2014. PMID: 25322183 Free article.

5

Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons.

Zhu SC, Yu ZG, Zhao LX, Wang JX, Li JM. Zhu SC, et al. Opt Express. 2015 Jun 1;23(11):13752-60. doi: 10.1364/OE.23.013752. Opt Express. 2015. PMID: 26072747 Free article.

6

Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes.

Shan L, Wei T, Sun Y, Zhang Y, Zhen A, Xiong Z, Wei Y, Yuan G, Wang J, Li J. Shan L, et al. Among authors: wang j. Opt Express. 2015 Jul 27;23(15):A957-65. doi: 10.1364/OE.23.00A957. Opt Express. 2015. PMID: 26367696 Free article.

7

Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

Liu Z, Yi X, Yu Z, Yuan G, Liu Y, Wang J, Li J, Lu N, Ferguson I, Zhang Y. Liu Z, et al. Among authors: wang j. Sci Rep. 2016 Apr 20;6:23950. doi: 10.1038/srep23950. Sci Rep. 2016. PMID: 27094639 Free PMC article. No abstract available.

8

Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells.

Tian Y, Yan J, Zhang Y, Zhang Y, Chen X, Guo Y, Wang J, Li J. Tian Y, et al. Among authors: wang j. Nanoscale. 2016 Jun 7;8(21):11012-8. doi: 10.1039/c5nr09056c. Epub 2016 May 13. Nanoscale. 2016. PMID: 27174102

9

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

Wei T, Yang J, Wei Y, Huo Z, Ji X, Zhang Y, Wang J, Li J, Fan S. Wei T, et al. Among authors: wang j. Sci Rep. 2016 Jun 24;6:28620. doi: 10.1038/srep28620. Sci Rep. 2016. PMID: 27340030 Free PMC article.

10

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.

Liu Z, Huang Y, Yi X, Fu B, Yuan G, Wang J, Li J, Zhang Y. Liu Z, et al. Among authors: wang j. Sci Rep. 2016 Aug 23;6:32033. doi: 10.1038/srep32033. Sci Rep. 2016. PMID: 27550805 Free PMC article.

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