Yi X - Search Results

1

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

Liu Z, Yi X, Yu Z, Yuan G, Liu Y, Wang J, Li J, Lu N, Ferguson I, Zhang Y. Liu Z, et al. Among authors: yi x. Sci Rep. 2016 Jan 18;6:19537. doi: 10.1038/srep19537. Sci Rep. 2016. PMID: 26777294 Free PMC article.

2

[The relation between cord compression rate and the outcome of surgical treatment].

Yi X, Ma Z, Zhang Y. Yi X, et al. Zhonghua Wai Ke Za Zhi. 1999 Oct;37(10):610-2. Zhonghua Wai Ke Za Zhi. 1999. PMID: 11829906 Chinese.

3

Novel surface display system for heterogonous proteins on Lactobacillus plantarum.

Xu W, Huang M, Zhang Y, Yi X, Dong W, Gao X, Jia C. Xu W, et al. Among authors: yi x. Lett Appl Microbiol. 2011 Dec;53(6):641-8. doi: 10.1111/j.1472-765X.2011.03160.x. Epub 2011 Oct 27. Lett Appl Microbiol. 2011. PMID: 21967414

4

Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.

Zhang Y, Xie H, Zheng H, Wei T, Yang H, Li J, Yi X, Song X, Wang G, Li J. Zhang Y, et al. Among authors: yi x. Opt Express. 2012 Mar 12;20(6):6808-15. doi: 10.1364/OE.20.006808. Opt Express. 2012. PMID: 22418563 Free article.

5

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.

Sun B, Zhao L, Wei T, Yi X, Liu Z, Wang G, Li J, Yi F. Sun B, et al. Among authors: yi x, yi f. Opt Express. 2012 Aug 13;20(17):18537-44. doi: 10.1364/OE.20.018537. Opt Express. 2012. PMID: 23038492 Free article.

6

Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching.

Ma J, Wang L, Liu Z, Yuan G, Ji X, Ma P, Wang J, Yi X, Wang G, Li J. Ma J, et al. Among authors: yi x. Opt Express. 2013 Feb 11;21(3):3547-56. doi: 10.1364/OE.21.003547. Opt Express. 2013. PMID: 23481812 Free article.

7

Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN.

Wang L, Liu Z, Guo E, Yang H, Yi X, Wang G. Wang L, et al. Among authors: yi x. ACS Appl Mater Interfaces. 2013 Jun 26;5(12):5797-803. doi: 10.1021/am401354z. Epub 2013 Jun 6. ACS Appl Mater Interfaces. 2013. PMID: 23716508

8

Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

Wang L, Cheng Y, Liu Z, Yi X, Zhu H, Wang G. Wang L, et al. Among authors: yi x. ACS Appl Mater Interfaces. 2016 Jan 20;8(2):1176-83. doi: 10.1021/acsami.5b09419. Epub 2016 Jan 7. ACS Appl Mater Interfaces. 2016. PMID: 26699194

9

Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides.

Liu Z, Yi X, Yu Z, Yuan G, Liu Y, Wang J, Li J, Lu N, Ferguson I, Zhang Y. Liu Z, et al. Among authors: yi x. Sci Rep. 2016 Apr 20;6:23950. doi: 10.1038/srep23950. Sci Rep. 2016. PMID: 27094639 Free PMC article. No abstract available.

10

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.

Liu Z, Huang Y, Yi X, Fu B, Yuan G, Wang J, Li J, Zhang Y. Liu Z, et al. Among authors: yi x. Sci Rep. 2016 Aug 23;6:32033. doi: 10.1038/srep32033. Sci Rep. 2016. PMID: 27550805 Free PMC article.

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