Zhang L - Search Results

1

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.

Wang J, Xu F, He C, Zhang L, Lu L, Wang X, Qin Z, Shen B. Wang J, et al. Among authors: zhang l. Sci Rep. 2017 Feb 21;7:42747. doi: 10.1038/srep42747. Sci Rep. 2017. PMID: 28220829 Free PMC article.

2

Generation of Rashba spin-orbit coupling in CdSe nanowire by ionic liquid gate.

Zhang S, Tang N, Jin W, Duan J, He X, Rong X, He C, Zhang L, Qin X, Dai L, Chen Y, Ge W, Shen B. Zhang S, et al. Among authors: zhang l. Nano Lett. 2015 Feb 11;15(2):1152-7. doi: 10.1021/nl504225c. Epub 2015 Jan 13. Nano Lett. 2015. PMID: 25574856

3

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

He C, Qin Z, Xu F, Hou M, Zhang S, Zhang L, Wang X, Ge W, Shen B. He C, et al. Among authors: zhang l, zhang s. Sci Rep. 2015 Aug 12;5:13046. doi: 10.1038/srep13046. Sci Rep. 2015. PMID: 26267249 Free PMC article.

4

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography.

Jiang S, Feng Y, Chen Z, Zhang L, Jiang X, Jiao Q, Li J, Chen Y, Li D, Liu L, Yu T, Shen B, Zhang G. Jiang S, et al. Among authors: zhang l, zhang g. Sci Rep. 2016 Feb 23;6:21573. doi: 10.1038/srep21573. Sci Rep. 2016. PMID: 26902178 Free PMC article.

5

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.

Cheng J, Yang X, Sang L, Guo L, Zhang J, Wang J, He C, Zhang L, Wang M, Xu F, Tang N, Qin Z, Wang X, Shen B. Cheng J, et al. Among authors: zhang l, zhang j. Sci Rep. 2016 Mar 10;6:23020. doi: 10.1038/srep23020. Sci Rep. 2016. PMID: 26960730 Free PMC article.

6

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.

He C, Qin Z, Xu F, Zhang L, Wang J, Hou M, Zhang S, Wang X, Ge W, Shen B. He C, et al. Among authors: zhang l, zhang s. Sci Rep. 2016 Apr 26;6:25124. doi: 10.1038/srep25124. Sci Rep. 2016. PMID: 27112969 Free PMC article.

7

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

Zhang L, Xu F, Wang J, He C, Guo W, Wang M, Sheng B, Lu L, Qin Z, Wang X, Shen B. Zhang L, et al. Sci Rep. 2016 Nov 4;6:35934. doi: 10.1038/srep35934. Sci Rep. 2016. PMID: 27812006 Free PMC article.

8

Edge Dislocations Triggered Surface Instability in Tensile Epitaxial Hexagonal Nitride Semiconductor.

Cheng J, Yang X, Zhang J, Hu A, Ji P, Feng Y, Guo L, He C, Zhang L, Xu F, Tang N, Wang X, Shen B. Cheng J, et al. Among authors: zhang l, zhang j. ACS Appl Mater Interfaces. 2016 Dec 14;8(49):34108-34114. doi: 10.1021/acsami.6b11124. Epub 2016 Dec 1. ACS Appl Mater Interfaces. 2016. PMID: 27960395

9

Group-III nitride heteroepitaxial films approaching bulk-class quality.

Wang J, Xie N, Xu F, Zhang L, Lang J, Kang X, Qin Z, Yang X, Tang N, Wang X, Ge W, Shen B. Wang J, et al. Among authors: zhang l. Nat Mater. 2023 Jul;22(7):853-859. doi: 10.1038/s41563-023-01573-6. Epub 2023 Jun 22. Nat Mater. 2023. PMID: 37349395

10

Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters.

Wang J, Ji C, Lang J, Xu F, Zhang L, Kang X, Qin Z, Yang X, Tang N, Wang X, Ge W, Shen B. Wang J, et al. Among authors: zhang l. Nat Commun. 2024 Oct 30;15(1):9398. doi: 10.1038/s41467-024-53857-3. Nat Commun. 2024. PMID: 39477963 Free PMC article.

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