Hwang CS - Search Results

1

In Situ Control of Oxygen Vacancies in TaO_x Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications.

Egorov KV, Kuzmichev DS, Chizhov PS, Lebedinskii YY, Hwang CS, Markeev AM. Egorov KV, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2017 Apr 19;9(15):13286-13292. doi: 10.1021/acsami.7b00778. Epub 2017 Apr 6. ACS Appl Mater Interfaces. 2017. PMID: 28350159

2

Effect of catalyst layer density and growth temperature in rapid atomic layer deposition of silica using tris(tert-pentoxy)silanol.

Won SJ, Kim JR, Suh S, Lee NI, Hwang CS, Kim HJ. Won SJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2011 May;3(5):1633-9. doi: 10.1021/am200176j. Epub 2011 May 3. ACS Appl Mater Interfaces. 2011. PMID: 21517074

3

Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 films.

Kim SK, Han S, Jeon W, Yoon JH, Han JH, Lee W, Hwang CS. Kim SK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4726-30. doi: 10.1021/am301094t. Epub 2012 Aug 16. ACS Appl Mater Interfaces. 2012. PMID: 22869517

4

Optimization of chemical structure of Schottky-type selection diode for crossbar resistive memory.

Kim GH, Lee JH, Jeon W, Song SJ, Seok JY, Yoon JH, Yoon KJ, Park TJ, Hwang CS. Kim GH, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5338-45. doi: 10.1021/am301293v. Epub 2012 Oct 3. ACS Appl Mater Interfaces. 2012. PMID: 22999222

5

Controlling work function and damaging effects of sputtered RuO₂ gate electrodes by changing oxygen gas ratio during sputtering.

Kim HK, Yu IH, Lee JH, Park TJ, Hwang CS. Kim HK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2013 Feb;5(4):1327-32. doi: 10.1021/am302604e. Epub 2013 Feb 18. ACS Appl Mater Interfaces. 2013. PMID: 23384114

6

Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gates.

Kim HK, Yu IH, Lee JH, Hwang CS. Kim HK, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2013 Jul 24;5(14):6769-72. doi: 10.1021/am401842h. Epub 2013 Jul 10. ACS Appl Mater Interfaces. 2013. PMID: 23806203

7

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

Jeon W, Rha SH, Lee W, Yoo YW, An CH, Jung KH, Kim SK, Hwang CS. Jeon W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 May 28;6(10):7910-7. doi: 10.1021/am501247u. Epub 2014 May 1. ACS Appl Mater Interfaces. 2014. PMID: 24749990

8

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

Choi YJ, Lim H, Lee S, Suh S, Kim JR, Jung HS, Park S, Lee JH, Kim SG, Hwang CS, Kim H. Choi YJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 May 28;6(10):7885-94. doi: 10.1021/am5012172. Epub 2014 Apr 29. ACS Appl Mater Interfaces. 2014. PMID: 24780393

9

Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.

Kim YJ, Oh S, Yang BS, Han SJ, Lee HW, Kim HJ, Jeong JK, Hwang CS, Kim HJ. Kim YJ, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 Aug 27;6(16):14026-36. doi: 10.1021/am503351e. Epub 2014 Aug 12. ACS Appl Mater Interfaces. 2014. PMID: 25090286

10

Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film.

Jeon W, Yoo S, Kim HK, Lee W, An CH, Chung MJ, Cho CJ, Kim SK, Hwang CS. Jeon W, et al. Among authors: hwang cs. ACS Appl Mater Interfaces. 2014 Dec 10;6(23):21632-7. doi: 10.1021/am506677e. Epub 2014 Nov 25. ACS Appl Mater Interfaces. 2014. PMID: 25402821

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