Zhao C - Search Results

1

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm.

Zhao C, Zhao CZ, Taylor S, Chalker PR. Zhao C, et al. Among authors: zhao cz. Materials (Basel). 2014 Jul 15;7(7):5117-5145. doi: 10.3390/ma7075117. Materials (Basel). 2014. PMID: 28788122 Free PMC article. Review.

2

Grain size dependence of dielectric relaxation in cerium oxide as high-k layer.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P, King P. Zhao C, et al. Among authors: zhao cz. Nanoscale Res Lett. 2013 Apr 15;8(1):172. doi: 10.1186/1556-276X-8-172. Nanoscale Res Lett. 2013. PMID: 23587419 Free PMC article.

3

Dielectric relaxation of high-k oxides.

Zhao C, Zhao CZ, Werner M, Taylor S, Chalker P. Zhao C, et al. Among authors: zhao cz. Nanoscale Res Lett. 2013 Nov 1;8(1):456. doi: 10.1186/1556-276X-8-456. Nanoscale Res Lett. 2013. PMID: 24180696 Free PMC article.

4

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

Wu J, Zhao Y, Zhao CZ, Yang L, Lu Q, Zhang Q, Smith J, Zhao Y. Wu J, et al. Materials (Basel). 2016 Aug 13;9(8):695. doi: 10.3390/ma9080695. Materials (Basel). 2016. PMID: 28773816 Free PMC article.

5

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement.

Zhao C, Zhao CZ, Lu Q, Yan X, Taylor S, Chalker PR. Zhao C, et al. Among authors: zhao cz. Materials (Basel). 2014 Oct 13;7(10):6965-6981. doi: 10.3390/ma7106965. Materials (Basel). 2014. PMID: 28788225 Free PMC article.

6

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

Lu Q, Zhao C, Mu Y, Zhao CZ, Taylor S, Chalker PR. Lu Q, et al. Among authors: zhao cz, zhao c. Materials (Basel). 2015 Jul 29;8(8):4829-4842. doi: 10.3390/ma8084829. Materials (Basel). 2015. PMID: 28793475 Free PMC article.

7

Electrical Properties and Interfacial Studies of Hf_xTi_1-xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.

Lu Q, Mu Y, Roberts JW, Althobaiti M, Dhanak VR, Wu J, Zhao C, Zhao CZ, Zhang Q, Yang L, Mitrovic IZ, Taylor S, Chalker PR. Lu Q, et al. Among authors: zhao cz, zhao c. Materials (Basel). 2015 Dec 2;8(12):8169-8182. doi: 10.3390/ma8125454. Materials (Basel). 2015. PMID: 28793705 Free PMC article.

8

Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements.

Tao J, Zhao CZ, Zhao C, Taechakumput P, Werner M, Taylor S, Chalker PR. Tao J, et al. Among authors: zhao cz, zhao c. Materials (Basel). 2012 Jun 1;5(6):1005-1032. doi: 10.3390/ma5061005. Materials (Basel). 2012. PMID: 28817021 Free PMC article. Review.

9

Nitrogen-Doped Hierarchical Porous Activated Carbon Derived from Paddy for High-Performance Supercapacitors.

Yuan Y, Sun Y, Feng Z, Li X, Yi R, Sun W, Zhao C, Yang L. Yuan Y, et al. Among authors: zhao c. Materials (Basel). 2021 Jan 9;14(2):318. doi: 10.3390/ma14020318. Materials (Basel). 2021. PMID: 33435436 Free PMC article.

10

Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing.

Liu Q, Zhao C, Zhao T, Liu Y, Mitrovic IZ, Xu W, Yang L, Zhao CZ. Liu Q, et al. Among authors: zhao cz, zhao t, zhao c. ACS Appl Mater Interfaces. 2021 Apr 28;13(16):18961-18973. doi: 10.1021/acsami.0c20947. Epub 2021 Apr 13. ACS Appl Mater Interfaces. 2021. PMID: 33848133

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