Li G - Search Results

1

The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration.

Xu Z, Yu Y, Han J, Wen L, Gao F, Zhang S, Li G. Xu Z, et al. Among authors: li g. Nanoscale. 2017 Nov 9;9(43):16864-16870. doi: 10.1039/c7nr04555g. Nanoscale. 2017. PMID: 29075717

2

Porous metallic MoO2-supported MoS2 nanosheets for enhanced electrocatalytic activity in the hydrogen evolution reaction.

Yang L, Zhou W, Hou D, Zhou K, Li G, Tang Z, Li L, Chen S. Yang L, et al. Among authors: li g, li l. Nanoscale. 2015 Mar 12;7(12):5203-8. doi: 10.1039/c4nr06754a. Nanoscale. 2015. PMID: 25700339

3

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates.

Wang W, Yang W, Gao F, Lin Y, Li G. Wang W, et al. Among authors: li g. Sci Rep. 2015 Mar 23;5:9315. doi: 10.1038/srep09315. Sci Rep. 2015. PMID: 25799042 Free PMC article.

4

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition.

Wang W, Yang W, Liu Z, Wang H, Wen L, Li G. Wang W, et al. Among authors: li g. Sci Rep. 2015 Jun 19;5:11480. doi: 10.1038/srep11480. Sci Rep. 2015. PMID: 26089026 Free PMC article.

5

Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.

Wen L, Gao F, Zhang S, Li G. Wen L, et al. Among authors: li g. Small. 2016 Aug;12(31):4277-85. doi: 10.1002/smll.201503387. Epub 2016 Jun 27. Small. 2016. PMID: 27348495

6

Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms.

Gao F, Wen L, Xu Z, Han J, Yu Y, Zhang S, Li G. Gao F, et al. Among authors: li g. Small. 2017 Jun;13(21). doi: 10.1002/smll.201603775. Epub 2017 Apr 6. Small. 2017. PMID: 28383169

7

Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy.

Xu Z, Zhang S, Gao F, Wen L, Yu Y, Li G. Xu Z, et al. Among authors: li g. Nanotechnology. 2018 Nov 23;29(47):475603. doi: 10.1088/1361-6528/aae0d4. Epub 2018 Sep 12. Nanotechnology. 2018. PMID: 30207545

8

Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy.

Shen J , Zheng Y , Xu Z , Yu Y , Gao F , Zhang S , Gan Y , Li G . Shen J , et al. Among authors: li g. Nanoscale. 2018 Nov 29;10(46):21951-21959. doi: 10.1039/c8nr07307d. Nanoscale. 2018. PMID: 30444225

9

Insight into the Ga/In flux ratio and crystallographic plane dependence of MBE self-assembled growth of InGaN nanorods on patterned sapphire substrates.

Shen J, Yu Y, Wang J, Zheng Y, Gan Y, Li G. Shen J, et al. Among authors: li g. Nanoscale. 2020 Feb 14;12(6):4018-4029. doi: 10.1039/c9nr09767h. Epub 2020 Feb 4. Nanoscale. 2020. PMID: 32016230

10

InGaN Nanorods Decorated with Au Nanoparticles for Enhanced Water Splitting Based on Surface Plasmon Resonance Effects.

Liu Q, Shi J, Xu Z, Zhang B, Liu H, Lin Y, Gao F, Li S, Li G. Liu Q, et al. Among authors: li s, li g. Nanomaterials (Basel). 2020 May 9;10(5):912. doi: 10.3390/nano10050912. Nanomaterials (Basel). 2020. PMID: 32397381 Free PMC article.

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