Effects of phosphorous and antimony doping on thin Ge layers grown on Si.
Yu X, Jia H, Yang J, Masteghin MG, Beere H, Mtunzi M, Deng H, Huo S, Chen C, Chen S, Tang M, Sweeney SJ, Ritchie D, Seeds A, Liu H.
Yu X, et al. Among authors: sweeney sj.
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PMID: 38575676
Free PMC article.