de Gendt S - Search Results

1

Material-Selective Doping of 2D TMDC through Al_xO_y Encapsulation.

Leonhardt A, Chiappe D, Afanas'ev VV, El Kazzi S, Shlyakhov I, Conard T, Franquet A, Huyghebaert C, de Gendt S. Leonhardt A, et al. Among authors: de gendt s. ACS Appl Mater Interfaces. 2019 Nov 13;11(45):42697-42707. doi: 10.1021/acsami.9b11550. Epub 2019 Oct 31. ACS Appl Mater Interfaces. 2019. PMID: 31625717

2

Grazing incidence-X-ray fluorescence spectrometry for the compositional analysis of nanometer-thin high-kappa dielectric HfO2 layers.

Hellin D, Delabie A, Puurunen RL, Beaven P, Conard T, Brijs B, De Gendt S, Vinckier C. Hellin D, et al. Among authors: de gendt s. Anal Sci. 2005 Jul;21(7):845-50. doi: 10.2116/analsci.21.845. Anal Sci. 2005. PMID: 16038507 Free article.

3

Toward tunable doping in graphene FETs by molecular self-assembled monolayers.

Li B, Klekachev AV, Cantoro M, Huyghebaert C, Stesmans A, Asselberghs I, De Gendt S, De Feyter S. Li B, et al. Among authors: de gendt s, de feyter s. Nanoscale. 2013 Oct 21;5(20):9640-4. doi: 10.1039/c3nr01255g. Nanoscale. 2013. PMID: 23827941

4

Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications.

Nourbakhsh A, Agarwal TK, Klekachev A, Asselberghs I, Cantoro M, Huyghebaert C, Heyns M, Verhelst M, Thean A, De Gendt S. Nourbakhsh A, et al. Among authors: de gendt s. Nanotechnology. 2014 Aug 29;25(34):345203. doi: 10.1088/0957-4484/25/34/345203. Epub 2014 Aug 7. Nanotechnology. 2014. PMID: 25101635

5

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides.

Nourbakhsh A, Adelmann C, Song Y, Lee CS, Asselberghs I, Huyghebaert C, Brizzi S, Tallarida M, Schmeisser D, Van Elshocht S, Heyns M, Kong J, Palacios T, De Gendt S. Nourbakhsh A, et al. Among authors: de gendt s. Nanoscale. 2015 Jun 28;7(24):10781-9. doi: 10.1039/c5nr01128k. Epub 2015 Jun 3. Nanoscale. 2015. PMID: 26036353 Free article.

6

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents.

Delabie A, Caymax M, Groven B, Heyne M, Haesevoets K, Meersschaut J, Nuytten T, Bender H, Conard T, Verdonck P, Van Elshocht S, De Gendt S, Heyns M, Barla K, Radu I, Thean A. Delabie A, et al. Among authors: de gendt s. Chem Commun (Camb). 2015 Nov 7;51(86):15692-5. doi: 10.1039/c5cc05272f. Epub 2015 Sep 14. Chem Commun (Camb). 2015. PMID: 26365629

7

Tunable doping of graphene by using physisorbed self-assembled networks.

Phillipson R, Lockhart de la Rosa CJ, Teyssandier J, Walke P, Waghray D, Fujita Y, Adisoejoso J, Mali KS, Asselberghs I, Huyghebaert C, Uji-I H, De Gendt S, De Feyter S. Phillipson R, et al. Among authors: de gendt s, de feyter s. Nanoscale. 2016 Dec 8;8(48):20017-20026. doi: 10.1039/c6nr07912a. Nanoscale. 2016. PMID: 27883146

8

Highly efficient and stable MoS₂ FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating.

Lockhart de la Rosa CJ, Nourbakhsh A, Heyne M, Asselberghs I, Huyghebaert C, Radu I, Heyns M, De Gendt S. Lockhart de la Rosa CJ, et al. Among authors: de gendt s. Nanoscale. 2017 Jan 7;9(1):258-265. doi: 10.1039/c6nr06980k. Epub 2016 Dec 1. Nanoscale. 2017. PMID: 27906404

9

Two-dimensional WS₂ nanoribbon deposition by conversion of pre-patterned amorphous silicon.

Heyne MH, de Marneffe JF, Delabie A, Caymax M, Neyts EC, Radu I, Huyghebaert C, De Gendt S. Heyne MH, et al. Among authors: de marneffe jf, de gendt s. Nanotechnology. 2017 Jan 27;28(4):04LT01. doi: 10.1088/1361-6528/aa510c. Epub 2016 Dec 15. Nanotechnology. 2017. PMID: 27977414

10

Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS₂ Films Grown on SiO₂ by Mo Sulfurization.

Stesmans A, Iacovo S, Chiappe D, Radu I, Huyghebaert C, De Gendt S, Afanas'ev VV. Stesmans A, et al. Among authors: de gendt s. Nanoscale Res Lett. 2017 Dec;12(1):283. doi: 10.1186/s11671-017-2008-x. Epub 2017 Apr 20. Nanoscale Res Lett. 2017. PMID: 28431460 Free PMC article.

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