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Magneto-Memristive Switching in a 2D Layer Antiferromagnet.
Kim HH, Jiang S, Yang B, Zhong S, Tian S, Li C, Lei H, Shan J, Mak KF, Tsen AW. Kim HH, et al. Among authors: mak kf. Adv Mater. 2020 Jan;32(2):e1905433. doi: 10.1002/adma.201905433. Epub 2019 Oct 24. Adv Mater. 2020. PMID: 31647588
Ultrafast photoluminescence from graphene.
Lui CH, Mak KF, Shan J, Heinz TF. Lui CH, et al. Among authors: mak kf. Phys Rev Lett. 2010 Sep 17;105(12):127404. doi: 10.1103/PhysRevLett.105.127404. Epub 2010 Sep 16. Phys Rev Lett. 2010. PMID: 20867672
Atomically thin MoS₂: a new direct-gap semiconductor.
Mak KF, Lee C, Hone J, Shan J, Heinz TF. Mak KF, et al. Phys Rev Lett. 2010 Sep 24;105(13):136805. doi: 10.1103/PhysRevLett.105.136805. Epub 2010 Sep 24. Phys Rev Lett. 2010. PMID: 21230799
Tightly bound trions in monolayer MoS2.
Mak KF, He K, Lee C, Lee GH, Hone J, Heinz TF, Shan J. Mak KF, et al. Nat Mater. 2013 Mar;12(3):207-11. doi: 10.1038/nmat3505. Epub 2012 Dec 2. Nat Mater. 2013. PMID: 23202371
109 results