Morris RJH - Search Results

1

Potential sources of compositional inaccuracy in the atom probe tomography of In_xGa_1-xAs.

Cuduvally R, Morris RJH, Ferrari P, Bogdanowicz J, Fleischmann C, Melkonyan D, Vandervorst W. Cuduvally R, et al. Among authors: morris rjh. Ultramicroscopy. 2020 Mar;210:112918. doi: 10.1016/j.ultramic.2019.112918. Epub 2019 Dec 14. Ultramicroscopy. 2020. PMID: 31918069

2

Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures.

Melkonyan D, Fleischmann C, Veloso A, Franquet A, Bogdanowicz J, Morris RJH, Vandervorst W. Melkonyan D, et al. Among authors: morris rjh. Ultramicroscopy. 2018 Mar;186:1-8. doi: 10.1016/j.ultramic.2017.12.009. Epub 2017 Dec 7. Ultramicroscopy. 2018. PMID: 29241145

3

Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification.

Morris RJH, Cuduvally R, Melkonyan D, Zhao M, van der Heide P, Vandervorst W. Morris RJH, et al. Ultramicroscopy. 2019 Nov;206:112813. doi: 10.1016/j.ultramic.2019.112813. Epub 2019 Jul 8. Ultramicroscopy. 2019. PMID: 31351311

4

Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN.

Morris RJH, Cuduvally R, Lin JR, Zhao M, Vandervorst W, Thuvander M, Fleischmann C. Morris RJH, et al. Ultramicroscopy. 2022 Nov;241:113592. doi: 10.1016/j.ultramic.2022.113592. Epub 2022 Jul 26. Ultramicroscopy. 2022. PMID: 35988476

5

Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe Tomography.

Morris RJH, Lin JR, Scheerder JE, Popovici MI, Meersschaut J, Goux L, Kar GS, van der Heide P, Fleischmann C. Morris RJH, et al. Microsc Microanal. 2024 Mar 7;30(1):49-58. doi: 10.1093/micmic/ozad144. Microsc Microanal. 2024. PMID: 38232229

6

The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography.

Guerguis B, Cuduvally R, Morris RJH, Arcuri G, Langelier B, Bassim N. Guerguis B, et al. Among authors: morris rjh. Ultramicroscopy. 2024 Dec;266:114034. doi: 10.1016/j.ultramic.2024.114034. Epub 2024 Aug 21. Ultramicroscopy. 2024. PMID: 39205346

7

Si1-x Ge x /Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing.

Morris RJ, Hase TP, Sanchez AM, Rowlands G. Morris RJ, et al. J Am Soc Mass Spectrom. 2016 Oct;27(10):1694-702. doi: 10.1007/s13361-016-1439-4. Epub 2016 Jul 21. J Am Soc Mass Spectrom. 2016. PMID: 27444703

8

Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants.

Linhart WM, Chai J, Morris RJ, Dowsett MG, McConville CF, Durbin SM, Veal TD. Linhart WM, et al. Phys Rev Lett. 2012 Dec 14;109(24):247605. doi: 10.1103/PhysRevLett.109.247605. Epub 2012 Dec 10. Phys Rev Lett. 2012. PMID: 23368381

9

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

Morris RJ, Dowsett MG, Beanland R, Dobbie A, Myronov M, Leadley DR. Morris RJ, et al. Anal Chem. 2012 Mar 6;84(5):2292-8. doi: 10.1021/ac202929x. Epub 2012 Feb 24. Anal Chem. 2012. PMID: 22296224

10

Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement.

Morris RJ, Dowsett MG, Beanland R, Parbrook PJ, McConville CF. Morris RJ, et al. Rapid Commun Mass Spectrom. 2010 Jul 30;24(14):2122-6. doi: 10.1002/rcm.4623. Rapid Commun Mass Spectrom. 2010. PMID: 20552690

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