Aagesen M - Search Results

1

Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids.

Carrad DJ, Bjergfelt M, Kanne T, Aagesen M, Krizek F, Fiordaliso EM, Johnson E, Nygård J, Jespersen TS. Carrad DJ, et al. Among authors: aagesen m. Adv Mater. 2020 Jun;32(23):e1908411. doi: 10.1002/adma.201908411. Epub 2020 Apr 26. Adv Mater. 2020. PMID: 32337791

2

Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots.

Sand-Jespersen T, Paaske J, Andersen BM, Grove-Rasmussen K, Jørgensen HI, Aagesen M, Sørensen CB, Lindelof PE, Flensberg K, Nygård J. Sand-Jespersen T, et al. Among authors: aagesen m. Phys Rev Lett. 2007 Sep 21;99(12):126603. doi: 10.1103/PhysRevLett.99.126603. Epub 2007 Sep 19. Phys Rev Lett. 2007. PMID: 17930535

3

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates.

Aagesen M, Johnson E, Sørensen CB, Mariager SO, Feidenhans'l R, Spiecker E, Nygård J, Lindelof PE. Aagesen M, et al. Nat Nanotechnol. 2007 Dec;2(12):761-4. doi: 10.1038/nnano.2007.378. Epub 2007 Nov 25. Nat Nanotechnol. 2007. PMID: 18654427

4

Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots.

Csonka S, Hofstetter L, Freitag F, Oberholzer S, Schönenberger C, Jespersen TS, Aagesen M, Nygård J. Csonka S, et al. Among authors: aagesen m. Nano Lett. 2008 Nov;8(11):3932-5. doi: 10.1021/nl802418w. Epub 2008 Oct 21. Nano Lett. 2008. PMID: 18937519

5

Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements.

Krogstrup P, Yamasaki J, Sørensen CB, Johnson E, Wagner JB, Pennington R, Aagesen M, Tanaka N, Nygård J. Krogstrup P, et al. Among authors: aagesen m. Nano Lett. 2009 Nov;9(11):3689-93. doi: 10.1021/nl901348d. Nano Lett. 2009. PMID: 19842690

6

Ferromagnetic proximity effect in a ferromagnet-quantum-dot-superconductor device.

Hofstetter L, Geresdi A, Aagesen M, Nygård J, Schönenberger C, Csonka S. Hofstetter L, et al. Among authors: aagesen m. Phys Rev Lett. 2010 Jun 18;104(24):246804. doi: 10.1103/PhysRevLett.104.246804. Epub 2010 Jun 18. Phys Rev Lett. 2010. PMID: 20867324

7

Impact of the liquid phase shape on the structure of III-V nanowires.

Krogstrup P, Curiotto S, Johnson E, Aagesen M, Nygård J, Chatain D. Krogstrup P, et al. Among authors: aagesen m. Phys Rev Lett. 2011 Mar 25;106(12):125505. doi: 10.1103/PhysRevLett.106.125505. Epub 2011 Mar 22. Phys Rev Lett. 2011. PMID: 21517326

8

Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111).

Madsen MH, Aagesen M, Krogstrup P, Sørensen C, Nygård J. Madsen MH, et al. Among authors: aagesen m. Nanoscale Res Lett. 2011 Aug 31;6(1):516. doi: 10.1186/1556-276X-6-516. Nanoscale Res Lett. 2011. PMID: 21880130 Free PMC article.

9

Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.

Holm JV, Jørgensen HI, Krogstrup P, Nygård J, Liu H, Aagesen M. Holm JV, et al. Among authors: aagesen m. Nat Commun. 2013;4:1498. doi: 10.1038/ncomms2510. Nat Commun. 2013. PMID: 23422666 Free article.

10

Three-fold Symmetric Doping Mechanism in GaAs Nanowires.

Dastjerdi MHT, Fiordaliso EM, Leshchenko ED, Akhtari-Zavareh A, Kasama T, Aagesen M, Dubrovskii VG, LaPierre RR. Dastjerdi MHT, et al. Among authors: aagesen m. Nano Lett. 2017 Oct 11;17(10):5875-5882. doi: 10.1021/acs.nanolett.7b00794. Epub 2017 Sep 20. Nano Lett. 2017. PMID: 28903563

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