Shin C - Search Results

1

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.

Yoon C, Moon S, Shin C. Yoon C, et al. Among authors: shin c. Nano Converg. 2020 Jun 1;7(1):19. doi: 10.1186/s40580-020-00230-x. Nano Converg. 2020. PMID: 32483648 Free PMC article.

2

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices.

Jo J, Choi WY, Park JD, Shim JW, Yu HY, Shin C. Jo J, et al. Among authors: shin c. Nano Lett. 2015 Jul 8;15(7):4553-6. doi: 10.1021/acs.nanolett.5b01130. Epub 2015 Jun 25. Nano Lett. 2015. PMID: 26103511

3

Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Ko E, Shin J, Shin C. Ko E, et al. Among authors: shin c, shin j. Nano Converg. 2018;5(1):2. doi: 10.1186/s40580-018-0135-4. Epub 2018 Jan 28. Nano Converg. 2018. PMID: 29399434 Free PMC article. Review.

4

Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis.

Ko E, Shin J, Shin C. Ko E, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6128-6130. doi: 10.1166/jnn.2019.16990. J Nanosci Nanotechnol. 2019. PMID: 31026921

5

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO₂/Al₂O₃ Superlattice on Transparent ITO/Glass Substrate.

Choi Y, Shin J, Moon S, Shin C. Choi Y, et al. Among authors: shin c, shin j. Micromachines (Basel). 2020 May 21;11(5):525. doi: 10.3390/mi11050525. Micromachines (Basel). 2020. PMID: 32455725 Free PMC article.

6

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO₂ Ferroelectric Capacitor.

Choi Y, Han C, Shin J, Moon S, Min J, Park H, Eom D, Lee J, Shin C. Choi Y, et al. Among authors: shin c, shin j. Sensors (Basel). 2022 May 27;22(11):4087. doi: 10.3390/s22114087. Sensors (Basel). 2022. PMID: 35684705 Free PMC article.

7

Experimental study of endurance characteristics of Al-doped HfO₂ferroelectric capacitor.

Choi Y, Shin J, Moon S, Min J, Han C, Shin C. Choi Y, et al. Among authors: shin c, shin j. Nanotechnology. 2023 Feb 17;34(18). doi: 10.1088/1361-6528/acb7fc. Nanotechnology. 2023. PMID: 36724507

8

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications.

Choi Y, Shin J, Min J, Moon S, Chu D, Han D, Shin C. Choi Y, et al. Among authors: shin c, shin j. Sci Rep. 2024 Nov 21;14(1):28912. doi: 10.1038/s41598-024-80523-x. Sci Rep. 2024. PMID: 39572653 Free PMC article.

9

Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor.

Cho H, Shin J, Shin C. Cho H, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6087-6090. doi: 10.1166/jnn.2019.16991. J Nanosci Nanotechnol. 2019. PMID: 31026913

10

Experimental study of threshold voltage shift for Si:HfO₂based ferroelectric field effect transistor.

Jung T, Shin C. Jung T, et al. Among authors: shin c. Nanotechnology. 2021 Jun 24;32(37). doi: 10.1088/1361-6528/ac08bc. Nanotechnology. 2021. PMID: 34098542

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