Lin SY - Search Results

1

Highly conductive nanometer-thick gold films grown on molybdenum disulfide surfaces for interconnect applications.

Zhang YW, Wu BY, Chen KC, Wu CH, Lin SY. Zhang YW, et al. Among authors: lin sy. Sci Rep. 2020 Sep 2;10(1):14463. doi: 10.1038/s41598-020-71520-x. Sci Rep. 2020. PMID: 32879394 Free PMC article.

2

1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy.

Wu CH, Chen HA, Lin SY, Wu CH. Wu CH, et al. Among authors: lin sy. Opt Lett. 2015 Aug 15;40(16):3747-9. doi: 10.1364/OL.40.003747. Opt Lett. 2015. PMID: 26274650

3

Establishment of 2D Crystal Heterostructures by Sulfurization of Sequential Transition Metal Depositions: Preparation, Characterization, and Selective Growth.

Wu CR, Chang XR, Chu TW, Chen HA, Wu CH, Lin SY. Wu CR, et al. Among authors: lin sy. Nano Lett. 2016 Nov 9;16(11):7093-7097. doi: 10.1021/acs.nanolett.6b03353. Epub 2016 Oct 24. Nano Lett. 2016. PMID: 27763763

4

The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment.

Wu CR, Chang XR, Wu CH, Lin SY. Wu CR, et al. Among authors: lin sy. Sci Rep. 2017 Feb 8;7:42146. doi: 10.1038/srep42146. Sci Rep. 2017. PMID: 28176836 Free PMC article.

5

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication.

Wu CR, Chu TW, Chen KC, Lin SY. Wu CR, et al. Among authors: lin sy. J Vis Exp. 2017 Nov 28;(129):56494. doi: 10.3791/56494. J Vis Exp. 2017. PMID: 29286451 Free PMC article.

6

Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS₂ on Three-Layer W _xMo_{1- x}S₂.

Chen KC, Jian CY, Chen YJ, Lee SC, Chang SW, Lin SY. Chen KC, et al. Among authors: lin sy. ACS Appl Mater Interfaces. 2018 Jul 25;10(29):24733-24738. doi: 10.1021/acsami.8b06327. Epub 2018 Jul 13. ACS Appl Mater Interfaces. 2018. PMID: 29969003

7

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material.

Lin HT, Hsu KS, Chang CC, Lin WH, Lin SY, Chang SW, Chang YC, Shih MH. Lin HT, et al. Among authors: lin sy, lin wh. Sci Rep. 2020 Mar 16;10(1):4757. doi: 10.1038/s41598-020-61539-5. Sci Rep. 2020. PMID: 32179783 Free PMC article.

8

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures.

Zhang YW, Li JY, Wu CH, Chang CY, Chang SW, Shih MH, Lin SY. Zhang YW, et al. Among authors: lin sy. Sci Rep. 2020 Apr 6;10(1):5967. doi: 10.1038/s41598-020-63098-1. Sci Rep. 2020. PMID: 32249852 Free PMC article.

9

Charge Storage of Isolated Monolayer Molybdenum Disulfide in Epitaxially Grown MoS₂/Graphene Heterostructures for Memory Device Applications.

Tsai PC, Huang CW, Chang SJ, Chang SW, Lin SY. Tsai PC, et al. Among authors: lin sy. ACS Appl Mater Interfaces. 2021 Sep 29;13(38):45864-45869. doi: 10.1021/acsami.1c12064. Epub 2021 Sep 14. ACS Appl Mater Interfaces. 2021. PMID: 34521198

10

Nanometer-thick copper films with low resistivity grown on 2D material surfaces.

Liu YW, Zhang DJ, Tsai PC, Chiang CT, Tu WC, Lin SY. Liu YW, et al. Among authors: lin sy. Sci Rep. 2022 Feb 2;12(1):1823. doi: 10.1038/s41598-022-05874-9. Sci Rep. 2022. PMID: 35110664 Free PMC article.

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