Liao L - Search Results

1

Hysteresis-free MoS₂ metal semiconductor field-effect transistors with van der Waals Schottky junction.

Wan D, Wang Q, Huang H, Jiang B, Chen C, Yang Z, Li G, Liu C, Liu X, Liao L. Wan D, et al. Among authors: liao l. Nanotechnology. 2021 Jan 7;32(13):135201. doi: 10.1088/1361-6528/abd2e8. Online ahead of print. Nanotechnology. 2021. PMID: 33410417

2

Ferroelectric memory based on nanostructures.

Liu X, Liu Y, Chen W, Li J, Liao L. Liu X, et al. Among authors: liao l. Nanoscale Res Lett. 2012 Jun 1;7(1):285. doi: 10.1186/1556-276X-7-285. Nanoscale Res Lett. 2012. PMID: 22655750 Free PMC article.

3

Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors.

Liu X, Wang C, Cai B, Xiao X, Guo S, Fan Z, Li J, Duan X, Liao L. Liu X, et al. Among authors: liao l. Nano Lett. 2012 Jul 11;12(7):3596-601. doi: 10.1021/nl3012648. Epub 2012 Jun 15. Nano Lett. 2012. PMID: 22694726

4

Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

Zou X, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Xiong Q, Liao L. Zou X, et al. Among authors: liao l. ACS Nano. 2013 Jan 22;7(1):804-10. doi: 10.1021/nn305289w. Epub 2012 Dec 17. ACS Nano. 2013. PMID: 23228028

5

High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage.

Liu X, Liu W, Xiao X, Wang C, Fan Z, Qu Y, Cai B, Guo S, Li J, Jiang C, Duan X, Liao L. Liu X, et al. Among authors: liao l. Nanoscale. 2013 Apr 7;5(7):2830-4. doi: 10.1039/c3nr34222k. Nanoscale. 2013. PMID: 23443668

6

Shape-dependent localized surface plasmon enhanced UV-emission from ZnO grown by atomic layer deposition.

Lin Y, Liu XQ, Wang T, Chen C, Wu H, Liao L, Liu C. Lin Y, et al. Among authors: liao l. Nanotechnology. 2013 Mar 29;24(12):125705. doi: 10.1088/0957-4484/24/12/125705. Epub 2013 Mar 6. Nanotechnology. 2013. PMID: 23466715

7

Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors.

Zou X, Wang J, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Fang Y, Liu W, Liao L. Zou X, et al. Among authors: liao l. Nano Lett. 2013 Jul 10;13(7):3287-92. doi: 10.1021/nl401498t. Epub 2013 Jun 27. Nano Lett. 2013. PMID: 23796312

8

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

Miao J, Hu W, Guo N, Lu Z, Liu X, Liao L, Chen P, Jiang T, Wu S, Ho JC, Wang L, Chen X, Lu W. Miao J, et al. Among authors: liao l. Small. 2015 Feb 25;11(8):936-42. doi: 10.1002/smll.201402312. Epub 2014 Oct 31. Small. 2015. PMID: 25363206

9

Comment on "Metal Semiconductor Field-Effect Transistor with MoS₂/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed".

Yang Z, Wang J, Liao L. Yang Z, et al. Among authors: liao l. ACS Nano. 2016 Feb 23;10(2):1714-5. doi: 10.1021/acsnano.5b07083. Epub 2016 Feb 4. ACS Nano. 2016. PMID: 26844951 No abstract available.

10

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

Xu L, Chen Q, Liao L, Liu X, Chang TC, Chang KC, Tsai TM, Jiang C, Wang J, Li J. Xu L, et al. Among authors: liao l. ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5408-15. doi: 10.1021/acsami.5b10220. Epub 2016 Feb 17. ACS Appl Mater Interfaces. 2016. PMID: 26856932

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