Kim J - Search Results

1

Crystallinity-dependent device characteristics of polycrystalline 2D n = 4 Ruddlesden-Popper perovskite photodetectors.

Kim J, Lee W, Cho K, Ahn H, Lee J, Baek KY, Kim JK, Kang K, Lee T. Kim J, et al. Among authors: kim jk. Nanotechnology. 2021 Apr 30;32(18):185203. doi: 10.1088/1361-6528/abe003. Nanotechnology. 2021. PMID: 33498023

2

Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules.

Cho K, Min M, Kim TY, Jeong H, Pak J, Kim JK, Jang J, Yun SJ, Lee YH, Hong WK, Lee T. Cho K, et al. Among authors: kim jk, kim ty. ACS Nano. 2015 Aug 25;9(8):8044-53. doi: 10.1021/acsnano.5b04400. Epub 2015 Aug 13. ACS Nano. 2015. PMID: 26262556

3

Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.

Pak J, Jang J, Cho K, Kim TY, Kim JK, Song Y, Hong WK, Min M, Lee H, Lee T. Pak J, et al. Among authors: kim jk, kim ty. Nanoscale. 2015 Nov 28;7(44):18780-8. doi: 10.1039/c5nr04836b. Epub 2015 Oct 27. Nanoscale. 2015. PMID: 26505460

4

Tailoring the electrical properties of MoS2 field effect transistors by depositing Au nanoparticles and alkanethiol molecules.

Cho K, Jeong H, Kim TY, Pak J, Kim JK, Choi BY, Lee T. Cho K, et al. Among authors: kim jk, kim ty. J Phys Condens Matter. 2016 May 11;28(18):184003. doi: 10.1088/0953-8984/28/18/184003. Epub 2016 Apr 8. J Phys Condens Matter. 2016. PMID: 27057642

5

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS₂ p-n heterojunction diodes.

Kim JK, Cho K, Kim TY, Pak J, Jang J, Song Y, Kim Y, Choi BY, Chung S, Hong WK, Lee T. Kim JK, et al. Among authors: kim ty, kim y. Sci Rep. 2016 Nov 10;6:36775. doi: 10.1038/srep36775. Sci Rep. 2016. PMID: 27829663 Free PMC article.

6

Analysis of the interface characteristics of CVD-grown monolayer MoS₂ by noise measurements.

Kim TY, Song Y, Cho K, Amani M, Ho Ahn G, Kim JK, Pak J, Chung S, Javey A, Lee T. Kim TY, et al. Among authors: kim jk. Nanotechnology. 2017 Apr 7;28(14):145702. doi: 10.1088/1361-6528/aa60f9. Epub 2017 Mar 9. Nanotechnology. 2017. PMID: 28276342

7

Transparent Large-Area MoS₂ Phototransistors with Inkjet-Printed Components on Flexible Platforms.

Kim TY, Ha J, Cho K, Pak J, Seo J, Park J, Kim JK, Chung S, Hong Y, Lee T. Kim TY, et al. Among authors: kim jk. ACS Nano. 2017 Oct 24;11(10):10273-10280. doi: 10.1021/acsnano.7b04893. Epub 2017 Aug 28. ACS Nano. 2017. PMID: 28841294

8

Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS₂ field effect transistors.

Kim JK, Song Y, Kim TY, Cho K, Pak J, Choi BY, Shin J, Chung S, Lee T. Kim JK, et al. Among authors: kim ty. Nanotechnology. 2017 Nov 24;28(47):47LT01. doi: 10.1088/1361-6528/aa9236. Nanotechnology. 2017. PMID: 28994396

9

Contact-Engineered Electrical Properties of MoS₂ Field-Effect Transistors via Selectively Deposited Thiol-Molecules.

Cho K, Pak J, Kim JK, Kang K, Kim TY, Shin J, Choi BY, Chung S, Lee T. Cho K, et al. Among authors: kim jk, kim ty. Adv Mater. 2018 May;30(18):e1705540. doi: 10.1002/adma.201705540. Epub 2018 Mar 23. Adv Mater. 2018. PMID: 29572972

10

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS₂ Field-Effect Transistors under High Electric Fields.

Pak J, Jang Y, Byun J, Cho K, Kim TY, Kim JK, Choi BY, Shin J, Hong Y, Chung S, Lee T. Pak J, et al. Among authors: kim jk, kim ty. ACS Nano. 2018 Jul 24;12(7):7109-7116. doi: 10.1021/acsnano.8b02925. Epub 2018 Jun 29. ACS Nano. 2018. PMID: 29952557

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