Oliver RA - Search Results

1

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced.

O'Hanlon TJ, Zhu T, Massabuau FC, Oliver RA. O'Hanlon TJ, et al. Among authors: oliver ra. Ultramicroscopy. 2021 Dec;231:113258. doi: 10.1016/j.ultramic.2021.113258. Epub 2021 Mar 11. Ultramicroscopy. 2021. PMID: 33812707 Free article.

2

Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire.

Oliver RA. Oliver RA. Ultramicroscopy. 2010 Dec;111(1):73-8. doi: 10.1016/j.ultramic.2010.10.008. Epub 2010 Oct 20. Ultramicroscopy. 2010. PMID: 21115277

3

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice.

Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ, Oliver RA. Bennett SE, et al. Among authors: oliver ra. Ultramicroscopy. 2011 Feb;111(3):207-11. doi: 10.1016/j.ultramic.2010.11.028. Epub 2010 Dec 1. Ultramicroscopy. 2011. PMID: 21333858

4

Unintentional doping in GaN.

Zhu T, Oliver RA. Zhu T, et al. Among authors: oliver ra. Phys Chem Chem Phys. 2012 Jul 21;14(27):9558-73. doi: 10.1039/c2cp40998d. Epub 2012 Jun 8. Phys Chem Chem Phys. 2012. PMID: 22684337

5

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Woolf A, Puchtler T, Aharonovich I, Zhu T, Niu N, Wang D, Oliver R, Hu EL. Woolf A, et al. Proc Natl Acad Sci U S A. 2014 Sep 30;111(39):14042-6. doi: 10.1073/pnas.1415464111. Epub 2014 Sep 2. Proc Natl Acad Sci U S A. 2014. PMID: 25197073 Free PMC article.

6

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

Puchtler TJ, Woolf A, Zhu T, Gachet D, Hu EL, Oliver RA. Puchtler TJ, et al. Among authors: oliver ra. ACS Photonics. 2015 Jan 21;2(1):137-143. doi: 10.1021/ph500426g. Epub 2014 Dec 17. ACS Photonics. 2015. PMID: 25839048 Free PMC article.

7

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

Zhu T, Ding T, Tang F, Han Y, Ali M, Badcock T, Kappers MJ, Shields AJ, Smoukov SK, Oliver RA. Zhu T, et al. Among authors: oliver ra. Cryst Growth Des. 2016 Feb 3;16(2):1010-1016. doi: 10.1021/acs.cgd.5b01560. Epub 2015 Dec 29. Cryst Growth Des. 2016. PMID: 27065755 Free PMC article.

8

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires.

Puchtler TJ, Wang T, Ren CX, Tang F, Oliver RA, Taylor RA, Zhu T. Puchtler TJ, et al. Among authors: oliver ra. Nano Lett. 2016 Dec 14;16(12):7779-7785. doi: 10.1021/acs.nanolett.6b03980. Epub 2016 Dec 5. Nano Lett. 2016. PMID: 27960480

9

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem.

Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ, Oliver RA. Humphreys CJ, et al. Among authors: oliver ra. Ultramicroscopy. 2017 May;176:93-98. doi: 10.1016/j.ultramic.2017.01.019. Epub 2017 Feb 3. Ultramicroscopy. 2017. PMID: 28196629 Free article.

10

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

Zhu T, Liu Y, Ding T, Fu WY, Jarman J, Ren CX, Kumar RV, Oliver RA. Zhu T, et al. Among authors: oliver ra. Sci Rep. 2017 Mar 27;7:45344. doi: 10.1038/srep45344. Sci Rep. 2017. PMID: 28345612 Free PMC article.

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