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Rashba-Edelstein Effect in the h-BN Van Der Waals Interface for Magnetization Switching.
Xie Q, Lin W, Liang J, Zhou H, Waqar M, Lin M, Teo SL, Chen H, Lu X, Shu X, Liu L, Chen S, Zhou C, Chai J, Yang P, Loh KP, Wang J, Jiang W, Manchon A, Yang H, Chen J. Xie Q, et al. Among authors: shu x. Adv Mater. 2022 Aug;34(33):e2109449. doi: 10.1002/adma.202109449. Epub 2022 Jul 14. Adv Mater. 2022. PMID: 35751473
Emergence of Topological Hall Effect in a SrRuO3 Single Layer.
Qin Q, Liu L, Lin W, Shu X, Xie Q, Lim Z, Li C, He S, Chow GM, Chen J. Qin Q, et al. Among authors: shu x. Adv Mater. 2019 Feb;31(8):e1807008. doi: 10.1002/adma.201807008. Epub 2019 Jan 7. Adv Mater. 2019. PMID: 30614567
Current-induced magnetization switching in all-oxide heterostructures.
Liu L, Qin Q, Lin W, Li C, Xie Q, He S, Shu X, Zhou C, Lim Z, Yu J, Lu W, Li M, Yan X, Pennycook SJ, Chen J. Liu L, et al. Among authors: shu x. Nat Nanotechnol. 2019 Oct;14(10):939-944. doi: 10.1038/s41565-019-0534-7. Epub 2019 Sep 9. Nat Nanotechnol. 2019. PMID: 31501531
3,757 results