Reyes DF - Search Results

1

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling.

Bailey NJ, Rockett TBO, Flores S, Reyes DF, David JPR, Richards RD. Bailey NJ, et al. Among authors: reyes df. Sci Rep. 2022 Jan 17;12(1):797. doi: 10.1038/s41598-021-04477-0. Sci Rep. 2022. PMID: 35039503 Free PMC article.

2

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures.

Reyes DF, Bastiman F, Hunter CJ, Sales DL, Sanchez AM, David JP, González D. Reyes DF, et al. Nanoscale Res Lett. 2014 Jan 13;9(1):23. doi: 10.1186/1556-276X-9-23. Nanoscale Res Lett. 2014. PMID: 24417864 Free PMC article.

3

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers.

Gonzalez D, Flores S, Braza V, Reyes DF, Carro AG, Stanojević L, Schwarz M, Ulloa JM, Ben T. Gonzalez D, et al. Among authors: reyes df. Nanomaterials (Basel). 2023 Feb 22;13(5):798. doi: 10.3390/nano13050798. Nanomaterials (Basel). 2023. PMID: 36903684 Free PMC article.

4

Strain-balanced type-II superlattices for efficient multi-junction solar cells.

Gonzalo A, Utrilla AD, Reyes DF, Braza V, Llorens JM, Fuertes Marrón D, Alén B, Ben T, González D, Guzman A, Hierro A, Ulloa JM. Gonzalo A, et al. Among authors: reyes df. Sci Rep. 2017 Jun 21;7(1):4012. doi: 10.1038/s41598-017-04321-4. Sci Rep. 2017. PMID: 28638150 Free PMC article.

5

Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques.

Khan AA, Herrera M, Fernández-Delgado N, Reyes DF, Pizarro J, Repiso E, Krier A, Molina SI. Khan AA, et al. Among authors: reyes df. Nanotechnology. 2020 Jan 10;31(2):025706. doi: 10.1088/1361-6528/ab4751. Epub 2019 Sep 24. Nanotechnology. 2020. PMID: 31550683

6

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications.

Braza V, Reyes DF, Gonzalo A, Utrilla AD, Ben T, Ulloa JM, González D. Braza V, et al. Among authors: reyes df. Nanoscale Res Lett. 2017 Dec;12(1):356. doi: 10.1186/s11671-017-2129-2. Epub 2017 May 18. Nanoscale Res Lett. 2017. PMID: 28525952 Free PMC article.

7

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

González D, Braza V, Utrilla AD, Gonzalo A, Reyes DF, Ben T, Guzman A, Hierro A, Ulloa JM. González D, et al. Among authors: reyes df. Nanotechnology. 2017 Oct 20;28(42):425702. doi: 10.1088/1361-6528/aa83e2. Epub 2017 Aug 3. Nanotechnology. 2017. PMID: 28770809

8

Synthesis and Characterization of Multilayered CrAlN/Al₂O₃ Tandem Coating Using HiPIMS for Solar Selective Applications at High Temperature.

Sanchez-Perez M, Rojas TC, Reyes DF, Ferrer FJ, Farchado M, Morales A, Escobar-Galindo R, Sanchez-Lopez JC. Sanchez-Perez M, et al. Among authors: reyes df. ACS Appl Energy Mater. 2023 Dec 29;7(2):438-449. doi: 10.1021/acsaem.3c02310. eCollection 2024 Jan 22. ACS Appl Energy Mater. 2023. PMID: 38273967 Free PMC article.

9

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.

Reyes DF, González D, Ulloa JM, Sales DL, Dominguez L, Mayoral A, Hierro A. Reyes DF, et al. Nanoscale Res Lett. 2012 Nov 27;7(1):653. doi: 10.1186/1556-276X-7-653. Nanoscale Res Lett. 2012. PMID: 23181950 Free PMC article.

10

General route for the decomposition of InAs quantum dots during the capping process.

González D, Reyes DF, Utrilla AD, Ben T, Braza V, Guzman A, Hierro A, Ulloa JM. González D, et al. Among authors: reyes df. Nanotechnology. 2016 Mar 29;27(12):125703. doi: 10.1088/0957-4484/27/12/125703. Epub 2016 Feb 18. Nanotechnology. 2016. PMID: 26891164

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