Shin C - Search Results

1

Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure.

Baek S, Yoo HH, Ju JH, Sriboriboon P, Singh P, Niu J, Park JH, Shin C, Kim Y, Lee S. Baek S, et al. Among authors: shin c. Adv Sci (Weinh). 2022 Jul;9(21):e2200566. doi: 10.1002/advs.202200566. Epub 2022 May 15. Adv Sci (Weinh). 2022. PMID: 35570404 Free PMC article.

2

Impact of Ferroelectric Capacitor's Electrode Area on the Performance of Negative Capacitance Field Effect Transistor.

Cho H, Shin J, Shin C. Cho H, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6087-6090. doi: 10.1166/jnn.2019.16991. J Nanosci Nanotechnol. 2019. PMID: 31026913

3

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits.

Shim J, Jang SW, Lim JH, Kim H, Kang DH, Kim KH, Seo S, Heo K, Shin C, Yu HY, Lee S, Ko DH, Park JH. Shim J, et al. Among authors: shin c. Nanoscale. 2019 Jul 21;11(27):12871-12877. doi: 10.1039/c9nr03441b. Epub 2019 Jun 27. Nanoscale. 2019. PMID: 31243409

4

Rhenium Diselenide (ReSe₂) Near-Infrared Photodetector: Performance Enhancement by Selective p-Doping Technique.

Kim J, Heo K, Kang DH, Shin C, Lee S, Yu HY, Park JH. Kim J, et al. Among authors: shin c. Adv Sci (Weinh). 2019 Aug 27;6(21):1901255. doi: 10.1002/advs.201901255. eCollection 2019 Nov 6. Adv Sci (Weinh). 2019. PMID: 31728284 Free PMC article.

5

Process-Induced Random Variation: Work-Function Variation in Stacked Nanowire Field Effect Transistor.

Park J, Shin C. Park J, et al. Among authors: shin c. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6091-6094. doi: 10.1166/jnn.2019.16993. J Nanosci Nanotechnol. 2019. PMID: 31026914

6

Steep Slope Silicon-on-Insulator Field Effect Transistor with Negative Capacitance: Analysis on Hysteresis.

Ko E, Shin J, Shin C. Ko E, et al. Among authors: shin c, shin j. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6128-6130. doi: 10.1166/jnn.2019.16990. J Nanosci Nanotechnol. 2019. PMID: 31026921

7

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor.

Yoon C, Moon S, Shin C. Yoon C, et al. Among authors: shin c. Nano Converg. 2020 Jun 1;7(1):19. doi: 10.1186/s40580-020-00230-x. Nano Converg. 2020. PMID: 32483648 Free PMC article.

8

Experimental study of threshold voltage shift for Si:HfO₂based ferroelectric field effect transistor.

Jung T, Shin C. Jung T, et al. Among authors: shin c. Nanotechnology. 2021 Jun 24;32(37). doi: 10.1088/1361-6528/ac08bc. Nanotechnology. 2021. PMID: 34098542

9

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO₂ Ferroelectric Capacitor.

Choi Y, Han C, Shin J, Moon S, Min J, Park H, Eom D, Lee J, Shin C. Choi Y, et al. Among authors: shin c, shin j. Sensors (Basel). 2022 May 27;22(11):4087. doi: 10.3390/s22114087. Sensors (Basel). 2022. PMID: 35684705 Free PMC article.

10

Oxygen reservoir effect of Tungsten trioxide electrode on endurance performance of ferroelectric capacitors for FeRAM applications.

Choi Y, Shin J, Min J, Moon S, Chu D, Han D, Shin C. Choi Y, et al. Among authors: shin c, shin j. Sci Rep. 2024 Nov 21;14(1):28912. doi: 10.1038/s41598-024-80523-x. Sci Rep. 2024. PMID: 39572653 Free PMC article.

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