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Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary-Metal-Oxide-Semiconductor Compatible Conditions by using HfN0.4 Electrode.
Adv Mater. 2025 Jan;37(1):e2413295. doi: 10.1002/adma.202413295. Epub 2024 Nov 13.
Adv Mater. 2025.
PMID: 39535445
Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure.
Baek S, Yoo HH, Ju JH, Sriboriboon P, Singh P, Niu J, Park JH, Shin C, Kim Y, Lee S.
Baek S, et al. Among authors: sriboriboon p.
Adv Sci (Weinh). 2022 Jul;9(21):e2200566. doi: 10.1002/advs.202200566. Epub 2022 May 15.
Adv Sci (Weinh). 2022.
PMID: 35570404
Free PMC article.
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